MMF60R580P ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor MMF60R580P
- FEATURES
- Lowpower loss
- Highspeed switching
- Lowon-resistance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- Motorcontrol
- DC – DCconverters
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 5 A IDM DrainCurrent-SinglePulsed 32 A PD TotalDissipation 26 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 4.8 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor MMF60R580P ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 600 V VGS(th) GateThresholdVoltage VDS=±30V;ID=0.25mA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=2.5A 0.53 0.58 Ω IGSS Gate-SourceLeakageCurrent VGS= ±30V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V 1 μA VSDF Diodeforwardvoltage ISD=8A,VGS =0V 1.4 V