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Any changing of specification will not be informed individual MMDT3906 PNP Silicon Multi-Chip Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente * Features ELECTRICAL CHARACTERISTICS ˄Tamb=25ćunless otherwise specified ˅ P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.05 A Emitter cut-off current IEBO VEB=-5V,IC=0 -0.05 A hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 300 hFE(4) VCE=-1V,IC=-50mA 60 DC current gain hFE(5) VCE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V Collector-emitter saturation voltage VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.65 -0.85 V Base-emitter saturation voltage VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V Transition frequency fT V CE=-20V,IC=-10mA,f=100MHz 250 MHz Collector output capacitance Cob VCB=-5V,IE=0,f=1MHz 4.5 pF Noise figure NF VCE=-5V,Ic=-0.1mA, f=1KHZ,Rg=1K¡ 4d B Delay time td 35 nS Rise time tr VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=- 1mA 35 nS Storage time tS 225 nS Fall time tf VCC=-3V, IC=-10mA IB1=-IB2=- 1mA 75 nS Power dissipation. Marking : K3N or A2 PCM : 0.2 W (Tamp.=25 C) Collector current O ICM : - 0.2 A Collector -base voltage V(BR) CBO : - 40 V Operating & storage junction temperature Tj, Tstg : -55 C ~ +150 C OO 06-May-2010 Rev.C Page 1 of 2 C 2 B 1 E 1 E 2 B 2 C 1 SOT-363 Dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026TYP (0.65TYP) .096(2.45) .085(2.15) .021REF (0.525)REF .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35 .045(1.15 .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) o o RoHS Compliant Product $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH
Any changing of specification will not be informed individual MMDT3906 PNP Silicon Multi-Chip Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 100 0.1 1 10 100 C , INPUT CAPACITANCE (pF)IBO C , OUTPUT CAPACITANCE (pF)OBO V , COLLECTOR-BASE VOLTAGE (V)CB Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage f = 1MHz Cibo Cobo 25 50 75 100 125 150 175 200 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE (°C)A Fig. 1, Max Power Dissipation vs Ambient Temperature 100 150 200 0.01 0.1 1 10 100 1000 V , COLLECTOR-EMITTER (V)CE(SAT) SATURATION VOLTAGE I , COLLECTOR CURRENT (mA)C Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current IC IB = 10 1000 100 0.1 1 10 1000100 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA)C Fig. 3, Typical DC Current Gain vs Collector Current T = -25°CA T = +25°CA T = 125°CA V = 1.0VCE 0.5 0.6 0.7 0.8 0.9 1.0 11 0 1 00 V , BASE-EMITTER (V)BE(SAT) SATURATION VOLTAGE I , COLLECTOR CURRENT (mA)C Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current IC IB =1 0 06-May-2010 Rev.C Page 2 of 2