MMDT3906 RECTRON | Alldatasheet

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FEATURES

gEpitaxial planar die construction gIdeal for low power amplification and switching MARKING:K3N MAXIMUM RATINGS(T/g68=25/g1071/g1071 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.2 W R/g537JA Thermal Resistance. Junction to Ambient Air 625 /g1071/W TJ Junction Temperature 150 /g1071 Tstg Storage Temperature -55-150 /g1071 ELECTRICAL CHARACTERISTICS(Ta=25/g1071unless otherwise specified) Parameter /g54/g92/g80/g69/g82/g79 /g55/g72/g86/g87 /g70/g82/g81/g71/g76/g87/g76/g82/g81/g86 /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g48/g76/g81 /g55/g92/g83 /g48/g68/g91/g3/g3/g3/g3/g3/g3/g3/g3/g56/g81/g76/g87 Collector-base breakdown voltage V(BR)CBO IC=-10/g541A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10/g541A,IC=0 -5 V Collector cut-off current ICEX V CE=-30V,VEB(OFF)=-3V -50 nA Base cut-off current IEBO V EB=-5V,IC=0 -50 nA hFE(1) V CE=-1V,IC=-0.1mA 60 hFE(2) V CE=-1V,IC=-1mA 80 hFE(3) V CE=-1V,IC=-10mA 100 300 hFE(4) V CE=-1V,IC=-50mA 60 DC current gain hFE(5) V CE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V Collector-emitter saturation voltage VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.65 -0.85 V Base-emitter saturation voltage VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V Transition frequency fT V CE=-20V,IC=-10mA,f=100MHz 250 MHz Collector output capacitance Cob V CB=-5V,IE=0,f=1MHz 4.5 pF Noise figure NF VCE=-5V,Ic=-0.1mA,f=1/g46Hz,Rg=1K/g525 /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g34 dB Delay time td 35 nS Rise time tr VCC=-3V, VBE=0.5V IC=-10mA , IB1=-IB2=-1mA 35 nS Storage time tS 225 nS Fall time tf VCC=-3V, IC=-10mA IB1=-IB2=- 1mA 75 nS /g54/g50/g55/g16/g22/g25/g22/g3 /g3 DUAL TRANSISTOR (PNP+PNP) MMDT3906 2018-03/02 REV:O

-0.1 -1 -10 -100 100 200 300 -1 -10 -100 -10 -100 -0.1 -1 -10 -1 -10 200 400 600 0 25 50 75 100 125 150 100 150 200 250 -0.1 -10 -100 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -20 -40 -60 -80 -100 fT —— I C hFE —— COMMON EMITTER VCE=-1V -3 -30-0.3 Ta=100ć Ta=25ć DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC -30 -300 -30-3 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) /g533=10 Ta=25ć Ta=100ć ICVCEsat —— -500 -200 -3-0.3 -20 Cob Cib REVERSE VOLTAGE V (V) f=1MHz IE=0/IC=0 Ta=25ć VCB/ VEBCob/ Cib —— CAPACITANCE C (pF) -3 -30 -50 VCE=-20V Ta=25ć TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )ć PC —— Ta VBEIC —— -30 -0.3 Ta=25ć Ta=100ć COMMON EMITTER VCE=-1V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) -200 -30-3 /g533=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) Ta=25ć Ta=100ć -200 ICVBEsat —— Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -500uA -450uA -400uA -350uA -300uA -250uA -200uA -150uA -100uA IB=-50uA COMMON EMITTER T a=25ć RATING AND CHARACTERISTICS CURVES ( MMDT3906)

/g54/g50/g55/g16/g22/g25/g22/g3/g51/g68/g70/g78/g68/g74/g72/g3/g50/g88/g87/g79/g76/g81/g72/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3 /g54/g50/g55/g16/g22/g25/g22/g54/g88/g74/g74/g72/g86/g87/g72/g71/g3/g51/g68/g71/g3/g47/g68/g92/g82/g88/g87/g3 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c0 . /g20/g19/g190.150 0.00 /g23 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.4 /g19/g19 0.085 0.09 /g23 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 /g537 0 °8 °0 °8 ° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

/g54/g50/g55/g16/g22/g25/g22/g3/g55/g68/g83/g72/g3/g68/g81/g71/g3/g53/g72/g72/g79

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