MMDT3906 PANJIT | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

DUAL SURFACE MOUNT PNP TRANSISTORS 6FEATURES

APPLICATIONS

This device contains two electrically-isolated 2N3906 PNP transistors. The two transistors have well matched hFE and are encapsulated in an ultra- small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. Electrically Isolated Dual PNP Switching Transistor General Purpose Amplifier Applications Hand-Held Computers, PDAs Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Voltage Collector Current Total Power Dissipation (Note 1) Operating Junction Temperature Range Storage Temperature Range 9/20/2005 Page 1 www.panjit.com -40 V V-40 V-5.0 mA-200 200 mW °C-55 to +150 °C-55 to +150 V V V I P T T CBO CEO EB C D stg T = 25°C Unless otherwise noted J J Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout SOT- 363 THERMAL CHARACTERISTICS Characteristic Symbol Units thjaThermal Resistance, Junction to Ambient (Note 1) 625 Value R °C/W Lead-Free Plating (100% matte tin finish) Device Marking Code: S2A 2 6 54 6 54 6 54 6 54

V = -3.0V, I = -10mA V (off) = 0.5V, I = -1.0mA I = -10uA www.panjit.com9/20/2005 Page 2 ELECTRICAL CHARACTERISTICS (Each Transistor) T = 25°C Unless otherwise notedJ C Parameter Symbol Min Units Collector-Emitter Breakdown Voltage Conditions Typ Max V(BR)CEO -40 - - VC -40 - - V Note 2. Short duration test pulse used to minimize self-heating (BR)CBOVCollector-Base Breakdown Voltage I = -1.0mA I = -10uA EEmitter-Base Breakdown Voltage (BR)EBOV V = -30V, V = -3.0VEBCEICEXCollector Cutoff Current -5.0 - - V - - -50 nA Base Cutoff Current IBL DC Current Gain hFE - - -50 nA - - -0.25 V - - -0.40 V 60 - - Collector-Emitter Saturation Voltage CE(SAT)V I = -10mA, I = -1.0mACB I = -50mA, I = -5.0mACB Base-Emitter Saturation Voltage BE(SAT)V -0.65 - -0.85 V - - -0.95 Gain-Bandwidth Product Tf 250 - - MHz Collector-Base Capacitance CBOC - - 4.5 pFCBV = -5.0V, f =1.0MHz V = -20V, I = -10mA f = 100MHz Emitter-Base Capacitance EBOC- - 1 0 p FEBV = -0.5V, f =1.0MHz MMDT3906 80 - - 100 - 300 - 60 - - 30 - - CEC Delay Time dt- - 3 5 n sCC Rise Time rt- - 3 5 n s Storage Time st - - 225 ns Fall Time ft - 75 ns V = -30V, V = -3.0VEBCE I = -1.0mA, V = -1.0VCEC I = -10mA, V = -1.0VCEC I = -50mA, V = -1.0VCEC I = -100mA, V = -1.0VCEC I = -10mA, I = -1.0mACB I = -50mA, I = -5.0mACB CCE BE C V = -3.0V, I = -10mA I = I = -1.0mA CC C B2B1 Storage and Fall Time Equivalent Test Circuit CS* < 4pF 275Ω 10KΩ 1N916 +9.1V 10 to 500us Duty Cycle ~ 2.0% -10.9V < 1ns CS* < 4pF 275Ω 10KΩ 1N916 +9.1V 10 to 500us Duty Cycle ~ 2.0% -10.9V < 1ns CS* < 4pF 275 Ω 10K Ω 1N916 0 0.5V 300ns Duty Cycle ~ 2.0% -10.9V < 1ns CS* < 4pF 275 Ω 10K Ω 1N916 0 0.5V 300ns Duty Cycle ~ 2.0% -10.9V < 1ns Delay and Rise Time Equivalent Test Circuit SWITCHING TIME EQUIV ALENT TEST CIRCUITS

0.1 1 10 100 Revers e Voltage, VR (V) Capacitance (pF) CIB (EB) COB (CB) 0.100 1.000 0.01 0.1 1 10 100 Collector Current, I C (mA) VBE(sat) (V) TJ = 100° TJ = 25° C TJ = 150° C IC/IB = 10 0.01 0.10 1.00 0.01 0.1 1 10 100 1000 Collector Current, I C (mA) VCE(sat) (V) TJ = 25° TJ = 150° IC/IB = 10 100 150 200 250 300 0.01 0.1 1 10 100 1000 Collector Current, I C (mA) hFE VCE = 1V TJ = 100° C TJ = 25° C TJ = 150° C Fig. 1. hFE vs. Ic MMDT3906 CHARACTERISTICS CURVES (Each Transistor) J 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 1000 Collector Current, I C (m A) VBE (V) TJ = 100° C TJ = 25° C TJ = 150° C VCE = 1V T = 25°C Unless otherwise noted Fig. 2. VBE vs. Ic Fig. 5. Capacitances www.panjit.com9/20/2005 Page 3

www.panjit.com9/20/2005 Page 4

ORDERING INFORMATION

MMDT3906 T/R7 - 3,000 units per 7 inch reel MMDT3906 T/R13 -10,000 units per 13 inch reel Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS MMDT3906