MMDT3904VC
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Features
BVCEO > 40V IC = 200mA High Collector Current Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product -definitions/ Mechanical Data Package: SOT563 package Material: Molded Plastic, “Green” Molding Compound ; UL Flammability Classification Rating 94V -0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish —Matte Tin Finish ; Solderable per MIL -STD- 202, Method 208 Weight: 0.003 grams (Approximate) Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel MMDT3904VC-7 Standard APK 7 8 3000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant . 2. See https://www.diodes.com/quality/lead -free/ for more information about Diodes Incorporated’s definition s of Halogen - and Antimony -free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlori ne (<1500ppm total Br + Cl) and <1000ppm antimony compounds . 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 Code I J K L M N O P R S T U Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View SOT563 Device Schematic Top View APK = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: J = 2022) M or M = Month (ex: 9 = September) SOT563 APK YM Bottom View
Document number: DS30636 Rev. 6 - 2 2 of 7 www.diodes.com January 2023 © Diodes Incorporated MMDT3904VC Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 200 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 150 mW Thermal Resistance, Junction to Ambient (Note 5) RϴJA 833 °C/W Operating and Storage and Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge—Human Body Model ESD HBM 4000 V 3A Electrostatic Discharge—Machine Model ESD MM 400 V C Notes: 5. For the device mounted on minimum recommended pad layout FR -4 PCB with high coverage of single sided 1oz copper, in still air conditions ; the device is measured when operati ng in a steady -state condition. 6. Refer to JEDEC specification JESD22 -A114 and JESD22 -A115.
Document number: DS30636 Rev. 6 - 2 3 of 7 www.diodes.com January 2023 © Diodes Incorporated MMDT3904VC Thermal Characteristic and Derating Information (Note 5)
Document number: DS30636 Rev. 6 - 2 4 of 7 www.diodes.com January 2023 © Diodes Incorporated MMDT3904VC Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO 60 — V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage (Note 7) BVCEO 40 — V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6 — V IE = 100µA, IC = 0 Collector-Emitter Cut-Off Current ICEV — 50 nA VCE = 30V, VEB(OFF) = 3V Emitter-Base Cut-Off Current IEBO — 50 nA VEB = 6V ON CHARACTERISTICS (Note 7) DC Current Gain hFE 100 300 IC = 100µA, VCE = 1V IC = 1mA, VCE = 1V IC = 10mA, VCE = 1V IC = 50mA, VCE = 1V IC = 100mA, VCE = 1V Collector-Emitter Saturation Voltage VCE(sat) — 0.20
0.30 V IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85
0.95 V IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo — 4 pF VCB = 5V, f = 1MHz, IE = 0 Input Capacitance Cibo — 8 pF VEB = 0.5V, f = 1MHz, IC = 0 Input Impedance hie 1 10 kΩ VCE = 10V, IC = 1mA, f = 1kHz Voltage Feedback Ratio hre 0.5 8.0 × 10-4 Small Signal Current Gain hfe 100 400 — Output Admittance hoe 1 40 µS Current Gain-Bandwidth Product fT 300 — MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF — 5.0 dB VCE = 5V, IC = 100μA, RS = 1kΩ f = 1kHz SWITCHING CHARACTERISTICS Delay Time td — 35 ns VCC = 3V, IC = 10mA, VBE(OFF) = -0.5V, IB1 = 1mA Rise Time tr — 35 ns Storage Time ts — 200 ns VCC = 3V, IC = 10mA, IB1 = -IB2 = 1mA Fall Time tf — 50 ns Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% .
Document number: DS30636 Rev. 6 - 2 5 of 7 www.diodes.com January 2023 © Diodes Incorporated MMDT3904VC Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 0.1 0.1 1 10 100 1,000 V , BASE-EMITTER (V) SATURATION VOLTAGE BE(SAT) I , COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current C 0.1 1 10 100 C , INPUT CAPACITANCE (pF) C , OUTPUT CAPACITANCE (pF) IBO OBO V , COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage CB 1,000 100 0.1 1 10 1,000100 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs. Collector Current C 0.01 0.1 0.1 1 10 100 1,000 V , COLLECTOR-EMITTER (V) SATURATION VOLTAGE CE(SAT) I , COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current C Typical Base-Emitter Saturation Voltage vs. Collector Current Input and Output Capacitance vs. Collector-Base Voltage Typical DC Current Gain vs. Collector Current Typical Collector-Emitter Saturation Voltage vs. Collector Current CIBO COBO TA = -25˚C TA = +25˚C TA = 125˚C VCE = 1.0V
Document number: DS30636 Rev. 6 - 2 6 of 7 www.diodes.com January 2023 © Diodes Incorporated MMDT3904VC Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT563 SOT563 Dim Min Max Typ A 0.55 0.60 -- b 0.15 0.30 0.20 c 0.10 0.18 0.11 D 1.50 1.70 1.60 E 1.55 1.70 1.60 E1 1.10 1.25 1.20 e -- -- 0.50 e1 0.90 1.10 1.00 L 0.10 0.30 0.20 a 8° 9° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT563 Dimensions Value (in mm) C 0.500 C1 1.270 G 0.600 X 0.300 X1 1.300 Y 0.670 Y1 1.940 b E1E e D A c L R.01 a aa a Y C G X
Document number: DS30636 Rev. 6 - 2 7 of 7 www.diodes.com January 2023 © Diodes Incorporated MMDT3904VC IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engin eering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety -related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their a pplications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality con trol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associ ated with their applications. 3. Diodes assumes no liability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein wi ll assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al l damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or fore ign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this docu ment. 5. Diodes’ p roducts are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms -and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in r espect of any products purchased through unauthorized sales cha nnel. 6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa le is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contraven tion of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any da mages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating t o any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may c ontain technical inaccuracies, omissions and typographical errors. Diodes does n ot warrant that information contained in this document is error -free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvemen ts, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion her eof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms -and- conditions/important-notice DIODES is a trademark of Diodes Incorporated in the United States and other countries. The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. © 2023 Diodes Incorporated. All Rights Reserved. www.diodes.com