MMDT3904V SECOS | Alldatasheet

Document overview

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Technical content

0.2A, 60V Dual /glyph1197P/glyph1197 Plastic-Encapsulated Transistors 10-May-2017 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

/circle6 Epitaxial Planar Die Construction /circle6 Ideal for Low Power amplification and Switching MARKING KAP

PACKAGE INFORMATION

(T A=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage VEBO 5 V Collector Current–Continuous I C 0.2 A Collector Power Dissipation P C 0.2 W Junction & Storage temperature T J, T STG 150, -55~150 °C

ELECTRICAL CHARACTERISTICS

(T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO 60 - - V I C =10µA, I E =0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 - - V I C =1mA, I B=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V I E =10µA, I C =0 Collector Cut-Off Current ICBO - - 0.05 uA V CB =30V, IE =0 Emitter Cut-Off Current I EBO - - 0.05 uA V EB =5V, I C =0 Collector Cut-Off Current ICEX - - 0.05 uA V CE =30V, V BE(off) =3V hFE(1) 40 - - V CE =1V, I C =0.1mA hFE(2) 70 - - V CE =1V, I C =1mA hFE(3) 100 - 300 V CE =1V, I C =10mA hFE(4) 60 - - V CE =1V, I C =50mA DC Current Gain hFE(5) 30 - - VCE =1V, I C =100mA VCE(sat)1 - - 0.2 V I C =10mA, I B=1mA Collector-Emitter Saturation Voltage VCE(sat)2 - - 0.3 V I C =50mA, I B=5mA VBE(sat)1 0.65 - 0.85 V I C =10mA, I B=1mA Base-Emitter Saturation Voltage VBE(sat)2 - - 0.95 V I C =50mA, I B=5mA Transition Frequency f T 300 - - MHz V CE =20V, I C =10mA, f=100MHz Collector Output Capacitance Cob - 4 - pF V CB =5V, I E =0, f=1MHz Delay Time t d - 35 - Rise Time t r - 35 - VCC =3V, V BE (off )= -0.5V, I C =10mA, IB1= -IB2=1mA Storage Time t s - 200 - Fall Time t f - 50 - nS VCC =3V, I C =10mA ,I B1= -IB2=1mA SOT-563 EF J B C D G A H A 1.50 1.70 F 0.09 0.16 B 1.50 1.70 G 0.45 0.55 C 0.525 0.60 H 0.17 0.27 D 1.10 1.30 J 0.10 0.30 E - 0.05

0.2A, 60V Dual /glyph1197P/glyph1197 Plastic-Encapsulated Transistors 10-May-2017 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS