MMDT3904DW GWSEMI | Alldatasheet
Document overview
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Technical content
Plastic-Encapsulate Transistors
FEATURES
z Epitaxial planar die construction z Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 0.2 A P C Collector Power Dissipation 0.2 W T J Junction Temperature 150 T stg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10μA,I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10μA,I C =0 5 V Collector cut-off current I CBO V CB =30V,I E =0 0.05 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.05 μA h FE(1) V CE =1V,I C =0.1mA 40 h FE(2) V CE =1V,I C =1mA 70 h FE(3) V CE =1V,I C =10mA 100 300 h FE(4) V CE =1V,I C =50mA 60 DC current gain h FE(5) V CE =1V,I C =100mA 30 V CE(sat)1 I C =10mA,I B =1mA 0.2 V Collector-emitter saturation voltage V CE(sat)2 I C =50mA,I B =5mA 0.3 V V BE(sat)1 I C =10mA,I B =1mA 0.65 0.85 V Base-emitter saturation voltage V BE(sat)2 I C =50mA,I B =5mA 0.95 V Transition frequency f T V CE =20V,I C =10mA,f=100MHz 300 MHz Collector output capacitance C ob V CB =5V,I E =0,f=1MHz 4 pF Noise figure NF V CE =5V,I c =0.1mA,f=1kHz,R S =1KΩ 5 dB Delay time t d 35 nS Rise time t r V CC =3V, V BE(off) =-0.5V I C =10mA , I =-I = 1mA 35 nS Storage time t s 200 nS Fall time t f V CC =3V, I C =10mA I =-I =1mA 50 nS Collector cut-off current I CEX V CE =30V,V BE(off) =3V 0.05 μA SOT-363 MMDT3904DW DUAL TRANSISTOR (NPN+NPN)
DUAL TRANSISTOR (NPN+NPN) Plastic surface mounted package; leads SOT-36