DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Any changing of specification will not be informed individual MMDT3904 NPN Silicon Multi-Chip Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente P arameter Sy mbol T est conditions MIN MAX UNIT Power dissipation Marking: K6N or MA ElECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) PCM : 0.2 W (Tamp.= 25 C) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 60 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O O O * Features Collector-base breakdown voltage V(BR)CBO Ic= 10 μA， I E=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， I B=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA， I C=0 5 V Collector cut-off current I CBO V CB= 30 V , I E=0 0.05 μA Collector cut-off current I CEO V CE= 30 V , I B=0 0.05 μA Emitter cut-off current I EBO V EB= 5V , I C=0 0.05 μA h FE（1） VCE= 1V, I C= 10mA 100 300 DC current gain h FE（2） VCE= 1V, I C= 50mA 60 Collector-emitter saturation voltage VCE(sat) I C=50 mA, I B= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) I C= 50 mA, I B= 5mA 0.95 V Transition frequency f T VCE= 20V, I C= 10mA f=100MHz
300 MHz
VCB=5V, I E= 0 f=1MHz 4 pF Delay time t d 35 nS Rise time t r VCC=3V, VBE=0.5V IC=10mA , IB1=1mA 35 nS Storage time t S 200 nS Fall time t f VCC=3V, IC=10mA IB1= IB2= 1mA 50 nS 06-May-2010 Rev. C Page 1 of 2 C 2 B 1 E 1 E 2 B 2 C 1 SOT-363 Dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026TYP (0.65TYP) .096(2.45) .085(2.15) .021REF (0.525)REF .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35 .045(1.15 .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) o o A suffix of "-C" specifies halogen & lead-free
Any changing of specification will not be informed individual MMDT3904 NPN Silicon Multi-Chip Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 0.1 1 10 100 C , INPUT CAPACITANCE (pF)IBO C , OUTPUT CAPACITANCE (pF)OBO V , COLLECTOR-BASE VOLTAGE (V)CB Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage Cibo Cobo f=1 M H z 25 50 75 100 125 150 175 200 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE (°C)A Fig. 1, Max Power Dissipation vs Ambient Temperature 100 150 200 0.01 0.1 0.1 1 10 100 1000 V , COLLECTOR-EMITTER (V)CE(SAT) SATURATION VOLTAGE I , COLLECTOR CURRENT (mA)C Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current IC IB =1 0 1000 100 0.1 1 10 1000100 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA)C Fig. 3, Typical DC Current Gain vs Collector Current T = -25°CA T = +25°CA T = 125°CA V = 1 . 0 VCE 0.1 0.1 1 10 100 1000 V , BASE-EMITTER (V)BE(SAT) SATURATION VOLTAGE I , COLLECTOR CURRENT (mA)C Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current IC IB =1 0_ 06-May-2010 Rev.C Page 2 of 2