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Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (Ta=25℃℃ unless otherwise noted) Symbol Parameter Value Units 9&%2 Collector-Base Voltage 60 V 9&(2 Collector-Emitter Voltage 40 V 9(%2 Emitter-Base Voltage 5 V ,& Collector Current -Continuous 0.2 A 3& Collector Power Dissipation 0.2 W 7- Junction Temperature 150 7VWJ Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-off current ICBO V CB=30V,IE=0 0.05 μA Emitter cut-off current IEBO V EB=5V,IC=0 0.05 μA hFE(1) V CE=1V,IC=0.1mA 40 hFE(2) V CE=1V,IC=1mA 70 hFE(3) V CE=1V,IC=10mA 100 300 hFE(4) V CE=1V,IC=50mA 60 DC current gain hFE(5) V CE=1V,IC=100mA 30 VCE(sat)1 IC=10mA,IB=1mA 0.2 V Collector-emitter saturation voltage VCE(sat)2 IC=50mA,IB=5mA 0.3 V VBE(sat)1 IC=10mA,IB=1mA 0.65 0.85 V Base-emitter saturation voltage VBE(sat)2 IC=50mA,IB=5mA 0.95 V Transition frequency fT VCE=20V,IC=10mA,f=100MHz 300 MHz Collector output capacitance Cob V CB=5V,IE=0,f=1MHz 4 pF Noise figure NF V CE=5V,Ic=0.1mA,f=1kHz,RS=1KΩ 5 dB Delay time td 35 nS Rise time tr VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA 35 nS Storage time ts 200 nS Fall time tf VCC=3V, IC=10mA IB1=-IB2=1mA 5 0 nS Collector cut-off current ICEX V CE=30V,VBE(off)=3V 0.05 μA SOT-363 DUAL TRANSISTOR (NPN+NPN) SOT-363 Plastic-Encapsulate Transistors MMDT3904 2016-03 REV: O2

0.1 1 10 100 100 150 200 250 300 0 25 50 75 100 125 150 100 200 300 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 11 0 1 0 0 100 200 300 400 0.1 100 200 VCE= 1V Ta=100 o C Ta=25 o C COLLECTOR CURRENT IC (mA) h NIAG TNERRUC CD EF IChFE —— NOITAPISSID REWOP ROTCELLOC P c )Wm( AMBIENT TEMPERATURE Ta ( )ć Pc —— Ta 200 COLLECTOR CURRENT IC (mA) NOITARUTAS RETTIME-ESAB V EGATLOV tasEB )V( Ta=25ć Ta=100ć β=10 ICVBEsat —— 200 Ta=25ć Ta=100ć β=10 VCEsat —— IC NOITARUTAS RETTIME-ROTCELLOC V EGATLOV tasEC )Vm( COLLECTOR CURRENT IC (mA) COMMON EMITTER Ta=25ć 70uA 63uA 56uA 49uA 42uA 35uA 28uA 21uA 14uA IB=7uA COLLECTOR-EMITTER VOLTAGE VCE (V) I TNERRUC ROTCELLOC C )Am( Static Characteristic 200 VCE=1V Ta=25ć Ta=100 o C BASE-EMITTER VOLTAGE VBE(V) I TNERRUC ROTCELLOC C )Am( IC—— VBE RATING AND CHARACTERISTICS CURVES ( MM DT3904)

/g54/g50/g55/g16/g22/g25/g22/g3/g51/g68/g70/g78/g68/g74/g72/g3/g50/g88/g87/g79/g76/g81/g72/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3 /g54/g50/g55/g16/g22/g25/g22 /g54/g88/g74/g74/g72/g86/g87/g72/g71/g3/g51/g68/g71/g3/g47/g68/g92/g82/g88/g87/g3 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c0 . /g20/g19/g19 0.150 0.00 /g23 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.4 /g19/g19 0.085 0.09 /g23 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 /g537 0 °8 °0 °8 ° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

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