MMDT3904_15 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Transistors ■ Features
- Epitaxial planar die construction
- Ideal for low power amplification and switching
- Dual NPN Transistors ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 200 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE=0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB=0 40 Emitter - base breakdown voltage VEBO IE= 100μA， IC=0 5 Collector-base cut-off current ICBO VCB= 60 V , IE=0 50 Collector- emittercut-off current ICEX VCE= 30 V , VEB(OFF)= -3V 50 Emitter cut-off current IEBO VEB= 5V , IC=0 50 IC=10 mA, IB=1mA 0.2 IC=50 mA, IB=5mA 0.3 IC=10 mA, IB=1mA 0.65 0.85 IC=50 mA, IB=5mA 0.95 hFE(1) VCE= 1V, IC= 0.1mA 40 hFE(2) VCE= 1V, IC= 10mA 100 300 hFE(3) VCE= 1V, IC= 50mA 60 Delay time td 35 Rise time tr 35 Storage time ts 200 Fall time tf 50 Noise figure NF VCE=5V,Ic=0.1mA,f=1KHz,RS=1KΩ 5 dB Collector output capacitance Cob VCB= 5V, IE= 0,f=1MHz,f=100MHz 4 pF Transition frequency fT VCE= 20V, IC= 10mA,f=100MHz 300 MHz V V nA Collector-emitter saturation voltage VCE(sat) VBE(sat) Base - emitter saturation voltage DC current gain VCC=3V, VBE= -0.5V IC=10mA , IB1=-IB2=1mA ns VCC=3V, IC=10mA , IB1=-IB2=1mA ■ Marking Marking K6N NPN Transistors MMDT3904 (KMDT3904)