MMDT3904 BILIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

BL Galaxy Electrical Production specification Dual NPN Small Signal Surface Mount Transistor MMDT3904 Document number: BL/SSSTE002 www.galaxycn.com R e v . A 1

FEATURES

z Epitaxial planar die construction. z Ideal for low power amplification and switching. z Ultra-small surface mount package z Also available in lead free version.

APPLICATIONS

z General switching and amplification SOT-363

ORDERING INFORMATION

T y p e N o . M a r k i n g P a c k a g e C o d e MMDT3904 K6N SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER VALUE UNIT VCBO collector-base voltage 60 V VCEO collector-emitter voltage 40 V VEBO emitter-base voltage 5 V IC collector current -continuous 0.2 A Ptot total power dissipation 0.2 W Tstg storage temperature 150 °C Tj junction temperature -55-150 °C

BL Galaxy Electrical Production specification Dual NPN Small Signal Surface Mount Transistor MMDT3904 Document number: BL/SSSTE002 www.galaxycn.com R e v . A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO Collector-base breakdown voltage IC=10μA,IE=0 60 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA,IB=0 B 40 V V(BR)EBO Emitter-base breakdown voltage IE=10μA,IC=0 5 V ICBO collector cut-off current IE = 0,VCB = 30V - 0.05 μA IEBO emitter cut-off current IC = 0, VEB = 5V - 0.05 μA hFE DC current gain VCE =1V,IC= 0.1mA VCE =1V,IC =1mA VCE =1V,IC =10mA VCE =1V,IC =50mA VCE =1V,IC =100mA 100 300 IC =10mA,IB =mA B - 200 mV VCE(sat) collector-emitter saturation voltage IC =50mA,IB =5mA B - 300 mV IC =10mA,IB =1mA B 650 850 mV VBE(sat) base-emitter saturation voltage IC =50mA, IB =5mA B - 950 mV Cob Output capacitance IE =0, VCB =5V; f =1MHz - 4 pF fT transition frequency IC=10mA,VCE=20V,f=100MHz 300 - MHz NF noise figure IC=0.1mA,VCE =5V,RS=1kΩ, f = 1kHz - 5 dB Switching times (between 10% and 90% levels); td delay time - 35 ns tr rise time VCC=3V,VBE(off)=-0.5V IC=10mA IB1=IB2=1mA - 35 ns ts storage time - 200 ns tf fall time VCC=3V,IC=10mA IB1=IB2=1mA - 50 ns

BL Galaxy Electrical Production specification Dual NPN Small Signal Surface Mount Transistor MMDT3904 Document number: BL/SSSTE002 www.galaxycn.com R e v . A 3 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

BL Galaxy Electrical Production specification Dual NPN Small Signal Surface Mount Transistor MMDT3904 Document number: BL/SSSTE002 www.galaxycn.com R e v . A 4 PACKAGE OUTLINE Plastic surface mounted package SOT-363 SOT-363 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.10 0.30 E 0.25 0.40 G 0.65Typical H 0.02 0.10 J 0.1Typical K 2.1 2.3 All Dimensions in mm

PACKAGE INFORMATION

MMDT3904 SOT-363 3000/Tape&Reel