MMDT3904 DIODES | Alldatasheet

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Maximum Ratings @ TA = 25/c176C unless otherwise specified A M J LD B C H K G F Mechanical Data /c183Case: SOT-363, Molded Plastic /c183Case Material - UL Flammability Rating Classification 94V-0 /c183Moisture sensitivity: Level 1 per J-STD-020A /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Terminal Connections: See Diagram /c183Marking (See Page 2): K6N /c183Ordering & Date Code Information: See Page 2 /c183Weight: 0.006 grams (approx.) Device Packaging Shipping MMDT3904-7 SOT-363 3000/Tape & Reel Ordering Information(Note 2) Notes: 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J /c190 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 /c97 0° 8° All Dimensions in mm

DS30088 Rev. 7 - 2 2 of 3 MMDT3904 www.diodes.com Electrical Characteristics @ TA = 25/c176C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage V(BR)CBO 60 /c190 V IC = 10/c109A, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 /c190 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 /c190 V IE = 10/c109A, IC = 0 Collector Cutoff Current ICEX /c190 50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cutoff Current IBL /c190 50 nA VCE = 30V, VEB(OFF) = 3.0V ON CHARACTERISTICS (Note 3) DC Current Gain hFE 100 /c190 /c190 300 /c190 /c190 /c190 I C = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, V CE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) /c190 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base- Emitter Saturation Voltage VBE(SAT) 0.65 /c190 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo /c190 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo /c190 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 k /c87 VCE = 10V, IC = 1.0mA, f = 1.0kHz Voltage Feedback Ratio hre 0.5 8.0 x 10 -4 Small Signal Current Gain hfe 100 400 /c190 Output Admittance hoe 1.0 40 /c109S Current Gain-Bandwidth Product fT 300 /c190 MHz VCE = 20V, IC = 10mA, f = 100MHz Noise Figure NF /c190 5.0 dB VCE = 5.0V, IC = 100/c109A, RS = 1.0k/c87/c44f = 1.0kHz SWITCHING CHARACTERISTICS Delay Time td /c190 35 ns VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mARise Time tr /c190 35 ns Storage Time ts /c190 200 ns VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mAFall Time tf /c190 50 ns Notes: 3. Short duration test pulse used to minimize self-heating. Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 123 45 6 7 89 OND Date Code Key K6N YMK6N YM Marking Information K6N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code JKL MN P R ST U VW

DS30088 Rev. 7 - 2 3 of 3 MMDT3904 www.diodes.com 0.1 0.1 1 10 100 1000 V , BASE-EMITTER (V)BE(SAT) SATURATION VOLTAGE I , COLLECTOR CURRENT (mA)C Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current IC IB =1 0 0.01 0.1 0.1 1 10 100 1000 V , COLLECTOR-EMITTER (V)CE(SAT) SATURATION VOLTAGE I , COLLECTOR CURRENT (mA)C Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current IC IB =1 0 1000 100 0.1 1 10 1000100 h , DC CURRENT GAINFE I , COLLECTOR CURRENT (mA)C Fig. 3, Typical DC Current Gain vs Collector Current T = -25°CA T = +25°CA T = 125°CA V = 1 . 0 VCE 0.1 1 10 100 C , INPUT CAPACITANCE (pF)IBO C , OUTPUT CAPACITANCE (pF)OBO V , COLLECTOR-BASE VOLTAGE (V)CB Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage Cibo Cobo f=1 M H z 25 50 75 100 125 150 175 200 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE (°C)A Fig. 1, Max Power Dissipation vs Ambient Temperature 100 150 200