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 Ultra-Small Surface Mount Package  Epitaxial Planar Die Construction  Ideal for Low Power Amplification and Switching  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. "Green" Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SOT363  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD- 202, Method 208  Weight: 0.006 grams (Approximate) Ordering Information (Notes 4 & 5) Product Status Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MMDT2907A-7-F Active AEC-Q101 K2F 7 8 3,000 MMDT2907AQ-7-F Active Automotive K2F 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC -Q101 and standard products are electrically and thermally the Marking Information Date Code Key Year 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 Code D E F G H I J K L M N O Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Device Symbol K2F = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) Top View SOT363 Top View Pin-Out SOT363

Document number: DS30109 Rev. 16 - 2 2 of 6 www.diodes.com April 2016 © Diodes Incorporated MMDT2907A Absolute Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -600 mA Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 200 mW Thermal Resistance, Junction to Ambient Air (Note 6) RθJA 625 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For the device mounted on minimum recommended pad layout FR -4 PCB with high coverage of single sided 1oz copper, in still air conditions ; the device is measured when operating in a steady-state condition. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics and Derating Information 100 150 200 250 0 120 200 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE ( C) Figure 1 Power Derating Curve A ° 16040 80

Document number: DS30109 Rev. 16 - 2 3 of 6 www.diodes.com April 2016 © Diodes Incorporated MMDT2907A Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO -60 — — V IC = -10µA, IB = 0 Collector-Emitter Breakdown Voltage (Note 8) BVCEO -60 — — V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -5 — — V IE = -10µA, IC = 0 Collector Cutoff Current ICBO — -10 -10 nA µA VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = +125° C Collector Cutoff Current ICEX — — -50 nA VCE = -30V, VEB(OFF) = -0.5V Base Cutoff Current IBL — — -50 nA VCE = -30V, VEB(OFF) = -0.5V ON CHARACTERISTICS (Note 8) DC Current Gain hFE 100 100 100 300 IC = -100µ A ,VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(sat) — — -0.4 -1.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(sat) — — -1.3 -2.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance COBO — — 8.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance CIBO — — 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0 Current Gain Bandwidth Product fT 200 — — MHz VCE = -20V, IC = -50mA, f = 100MHz SWITCHING CHARACTERISTICS Turn-On Time ton — — 45 ns VCC = -30V, IC = -150mA, IB1 = -15mA Delay Time td — — 10 ns Rise Time tr — — 40 ns Turn-Off Time toff — — 100 ns VCC = -6V, IC = -150mA, IB1 = -IB2 = -15mA Storage Time ts — — 80 ns Fall Time tf — — 30 ns Note: 8. Short duration pulse test used to minimize self-heating effect.

Document number: DS30109 Rev. 16 - 2 4 of 6 www.diodes.com April 2016 © Diodes Incorporated MMDT2907A Typical Electrical Characteristics (@TA = +25° C, unless otherwise specified.) CAPACITANCE (pF) V , REVERSE VOLTAGE (V) Fig. 2, Typical Capacitance Characteristics R -0.1 -0.2 -0.3 -0.6 -0.5 -0.4 -1 -10 -100 -1,000 I , COLLECTOR CURRENT (mA) Fig. 4, Collector Emitter Saturation Voltage vs. Collector Current C V , COLLECTOR TO EMITTER SATURATION VOLTAGE (V) CE(SAT) 1,000 100 -1 -10 -1,000-100 h , DC CURRENT GAIN FE I , COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs. Collector Current C 1,000 100 -1 -10 -100 f , GAIN BANDWIDTH PRODUCT (MHz)T I , COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current C -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -0.1 -1 -10 -100 V , BASE EMITTER VOLTAGE (V)BE(ON) I , COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs. Collector Current C I BASE CURRENT (mA) Fig. 3, Typical Collector Saturation Region V , COLLECTOR-EMITTER VOLTAGE (V)CE -0.001 -0.01 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.1 -1 -10 -100 I = -1mAC I = -10mAC I = -30mAC I = -100mAC I = -300mAC

Document number: DS30109 Rev. 16 - 2 5 of 6 www.diodes.com April 2016 © Diodes Incorporated MMDT2907A Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -- All Dimensions in mm Dimensions Value (in mm) C 0.650 G 1.300 X 0.420 Y 0.600 Y1 2.500 e D L b E F c a Y1 G Y X C

Document number: DS30109 Rev. 16 - 2 6 of 6 www.diodes.com April 2016 © Diodes Incorporated MMDT2907A IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product nam es and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this do cument is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Cus tomers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com