MMDT2907A

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UNISONIC TECHNOLOGIES CO., LTD MMDT2907A Preliminary DUAL TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R218-028.b NPN & PNP GENERAL PURPOSE AMPLIFIER  DESCRIPTION The UTC MMDT2907A is an NPN & PNP general purpose amplifier. it’s suitable for a m edium power amplifier and switch requiring collector currents up to 500mA.  FEATURES * Low VCE(SAT * High collector current gain under high collector current condition  EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 1 2 3 4 5 6 MMDT2907AG-AL6-R SOT-363 E1 B1 C2 E2 B2 C1 Tape Reel MMDT2907AG-AL6-R (1)Packing Type (2)Package Type (1) R: Tape Reel (2) AL6: SOT-363 (3) G: Halogen Free and Lead Free(3)Green Package  MARKING

MMDT2907A Preliminary DUAL TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 2 1 8 - 0 2 8 . b  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) (Note 1, 2) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage TR1 VCEO 30 V TR2 -30 V Collector-Base Voltage TR1 VCBO 60 V TR2 -60 V Emitter-Base Voltage TR1 VEBO 5.0 V TR2 -5.0 V Collector Current - Continuous TR1 IC 500 mA TR2 -500 mA Total Device Dissipation PD 300 mW Derate above 25°C 2.4 mW/°C Junction Temperature T J -55~+150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These ratings are limiting values above which t he serviceability of any semiconductor device may be impaired 3. All voltages (V) and currents (A) are negative polarity for PNP transistors.  THERMAL DATA (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Thermal Resistance, Junction to Ambient θJA 415 °C/W  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) (Note 2) TR1 PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) V (BR)CEO IC=10mA, IB=0 30 V Collector-Base Breakdown Voltage V (BR)CBO IC=10µA, IE=0 60 V Emitter-Base Breakdown Voltage V (BR)EBO IE=10µA, IC=0 5.0 V Collector Cutoff Current I CBO V CB=50V, IE=0 30 nA Emitter Cutoff Current I EBO V EB=3.0V, IC=0 30 nA ON CHARACTERISTICS DC Current Gain h FE IC=1.0mA, VCE=10V 50 IC=10mA, VCE=10V 75 IC=150mA, VCE=10V (Note 1) 100 IC=300mA, VCE=10V (Note 1) 30 Collector-Emitter Saturation Voltage (Note 1) V CE(sat) IC=150mA, IB=15mA 0.4 V IC=300mA, IB=30mA 1.4 V Base-Emitter Saturation Voltage (Note 1) V BE(sat) I C=150mA, IB=15mA 1.3 V SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product f T IC=50mA, VCE=20V, f=100MHz 250 MHz Output Capacitance C OBO V CB=10V, IE=0, f=100kHz 4.0 pF Input Capacitance C IBO V EB=2.0V, IC=0, f=100kHz 12 pF Noise Figure NF IC=100µA, VCE=10V, RS=1.0kΩ, f=1.0kHz 2.0 dB

MMDT2907A Preliminary DUAL TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 2 1 8 - 0 2 8 . b  ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING CHARACTERISTICS Turn-on Time t ON VCC=30V, IC=150mA, IB1=15mA 30 ns Delay Time t D 8.0 ns Rise Time t R 20 ns Turn-off Time t OFF VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 ns Storage Time t S 60 ns Fall Time t F 20 ns Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0% 2. All voltages (V) and currents (A) are negative polarity for PNP transistors. TR2 PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) V (BR)CEO IC=-10mA, IB=0 -30 V Collector-Base Breakdown Voltage V (BR)CBO IC=-10µA, IE=0 -60 V Emitter-Base Breakdown Voltage V (BR)EBO IE=-10µA, IC=0 -5.0 V Collector Cutoff Current I CBO V CB=-50V, IE=0 -30 nA Emitter Cutoff Current I EBO V EB=-3.0V, IC=0 -30 nA ON CHARACTERISTICS DC Current Gain h FE IC=-1.0mA, VCE=-10V 50 IC=-10mA, VCE=-10V 75 IC=-150mA, VCE=-10V (Note 1) 100 IC=-300mA, VCE=-10V (Note 1) 30 Collector-Emitter Saturation Voltage (Note 1) V CE(sat) IC=-150mA, IB=-15mA -0.4 V IC=-300mA, IB=-30mA -1.4 V Base-Emitter Saturation Voltage (Note 1) V BE(sat) I C=-150mA, IB=-15mA -1.3 V SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product f T IC=-50mA, VCE=-20V, f=100MHz 250 MHz Output Capacitance C OBO V CB=-10V, IE=0, f=100kHz 4.0 pF Input Capacitance C IBO V EB=-2.0V, IC=0, f=100kHz 12 pF Noise Figure NF IC=-100µA, VCE=-10V, RS=1.0kΩ, f=1.0kHz 2.0 dB SWITCHING CHARACTERISTICS Turn-on Time t ON VCC=-30V, IC=-150mA, IB1=-15mA 30 ns Delay Time t D 8.0 ns Rise Time t R 20 ns Turn-off Time t OFF VCC=6.0V, IC=-150mA, IB1=IB2=-15mA 80 ns Storage Time t S 60 ns Fall Time t F 20 ns Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0% 2. All voltages (V) and currents (A) are negative polarity for PNP transistors.

MMDT2907A Preliminary DUAL TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 2 1 8 - 0 2 8 . b UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.