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WEJ ELECTRONIC CO.,LTD MMDT2907A TRANSISTOR (PNP)
FEATURES
P CM: 0 . 1 5 W ( T a mb = 2 5 ℃ ) Collector current I CM: - 0 . 6 A Collector-base voltage V (BR)CBO: - 6 0 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= -10µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic= -10mA, I B=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO V CB=-50V, IE=0 -0. 01 µA Emitter cut-off current IEBO V EB= -3V, I C=0 -0. 01 µA hFE(1) V CE=-10V, IC= -0.1mA 75 hFE(2) V CE=-10V, IC= -1mA 100 hFE(3) V CE=-10V, IC=-10mA 100 hFE(4) V CE=-10V, IC= -150mA 100 300 DC current gain hFE(5) V CE=-10V, IC=-500mA 50 VCE(sat)1 I C=-150 mA, IB=-15mA -0.4 V Collector-emitter saturation voltage VCE(sat)2 I C=-500 mA, IB=- 50mA -1.6 V VBE(sat)1 I C=-150 mA, IB=-15mA -1.3 V Base-emitter saturation voltage VBE(sat)2 I C=-500 mA, IB= -50mA -2.6 V Transition frequency fT VCE=-20V, IC= -50mA f=100MHz
200 MHz
VCB=-10V, IE= 0 f=1MHz 8 pF Input Capacitance Cib VEB=-2V, IC= 0 f=1MHz 30 pF Delay time td 10 nS Rise time tr VCC=-30V, IC=-150mA, IB1=-15mA 40 nS Storage time tS 225 nS Fall time tf VCC=-6V, IC=-150mA IB1= IB2= -15mA 60 nS Marking K2F MMDT2907A Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS
WEJ ELECTRONIC CO.,LTD Typical Characteristics MMDT2907A MMDT2907A Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS