MMDT2907A SECOS | Alldatasheet
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Any changing of specification will not be informed individual MMDT2907A PNP Silicon Multi-Chip Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente Power dissipation * Features PCM : 0.15 W (Tamp.= 25 C) Collector current ICM : -0.6 A Collector-base voltage V(BR)CBO : -60 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O O Electrical Characteristics( Tamb=25 O C unless otherwise specified) Marking: K2F, 2F P a r a m e t e r Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -10μA， I E=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic= -10mA， I B=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA， I C=0 -5 V Collector cut-off current I CBO VCB=-50 V , I E=0 -0. 01 μA Emitter cut-off current I EBO VEB= -3V , I C=0 -0. 01 μA h FE(1) VCE=-10V, I C= -0.1mA 75 h FE(2) VCE=-10V, I C= -1mA 100 h FE(3) VCE=-10V, I C=-10mA 100 h FE(4) VCE=-10V, I C= -150mA 100 300 DC current gain h FE(5) VCE=-10V, I C=-500mA 50 VCE(sat)1 IC=-150 mA, IB=-15mA -0.4 V Collector-emitter saturation voltage VCE(sat)2 IC=-500 mA, IB=- 50mA -1.6 V VBE(sat)1 IC=-150 mA, IB=-15mA -1.3 V Base-emitter saturation voltage VBE(sat)2 IC=-500 mA, IB= -50mA -2.6 V Transition frequency f T VCE=-20V, I C= -50mA f=100MHz
200 MHz
VCB=-10V, I E= 0 f=1MHz 8 pF Input Capacitance Cib VEB=-2V, I C= 0 f=1MHz 30 pF Delay time t d 10 nS Rise time t r VCC=-30V, IC=-150mA,IB1=-15mA 40 nS Storage time t S 225 nS Fall time t f VCC=-6V, IC=-150mA IB1= IB2= -15mA 60 nS 01-Jan-2007 Rev. C Page 1 of 3 C 2 B 1 E 1 E 2 B 2 C 1 SOT-363 Dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026TYP (0.65TYP) .096(2.45) .085(2.15) .021REF (0.525)REF .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) o o RoHS Compliant Product A suffix of "-C" specifies halogen-free