MMDT2907A PANJIT | Alldatasheet

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PAGE . 1May 12.2010-REV.00 MMDT2907A 1 2 3 6 5 4 Fig.53 VOLTAGE POWER 60 Volts 150 mW 0.054(1.35) 0.045(1.15) 0.040(1.00) 0.031(0.80) 0.010(0.25) 0.018(0.45) 0.006(0.15) 0.087(2.20) 0.078(2.00) 0.044(1.10) MAX. DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

  • PNP epitaxial silicon, planar design
  • Collector-emitter voltage VCE = -60V
  • Collector current IC = -600mA
  • In compliance with EU RoHS 2002/95/EC directives ABSOLUTE MAXIMUM RATINGS
  • Case: SOT-363
  • Terminals : Solderable per MIL-STD-750,Method 2026
  • Apporx. Weight: 0.0002 ounce, 0.006 gram
  • Device Marking : M7A MECHANICAL DATA

FEATURES

Parameter Symbol Value Units Collector-Emitter Voltage VCEO -60 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -5.0 V Collector Current-Continuous IC -600 mA THERMAL CHATACTERISTICS Parameter Symbol Value Units Max Power Dissipation (Note 1) PTOT 150 mW Thermal Resistance, Junction to Ambient RθJA 830 OC / W Storage T emperature TSTG -55 to +150 OC Junction Temperaure TJ -55 to +150 OC Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in.

PAGE . 2May 12.2010-REV.00 MMDT2907A Parameter Symbol Te s t C o nd i t i o n Min. Typ. Max. Units Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA,IB=0 -60 - - V Collector-Base Breakdown Voltage V(BR)CBO IC=-10μA,IE=0 -60 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10μA,IC=0 -5.0 - - V Base Cutoff Current IBL VCE=-30V,VEB=-0.5V - - -50 nA Collector Cutoff Current ICEX VCE=-30V,VEB=-0.5V - - -50 nA ICBO VCE=-50V,IE=0 - - -10 nA VCE=-50V,IE=0 T J=125OC - - -10 μA DC Current Gain hFE IC=-0.1mA,VCE=-10V IC=-1.0mA,VCE=-10V IC=-10mA,VCE=-10V IC=-150mA,VCE=-10V IC=-500mA,VCE=-10V 100 100 100 300 Collector-Emitter Saturation Voltage VCE(SAT) IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA -0.4 -1.6 V Base-Emitter Saturation Voltage VBE(SAT) IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA -1.3 -2.6 V Collector-Base Capacitance CCBO VCB=-10V,IE=0,f=1MHz - - 8.0 pF Emitter-Base Capacitance CEBO VCB=-2V,IC=0,f=1MHz - - 30 pF Current Gain-Bandwidth Product FT IC=-50mA,VCE=-20V, f=100MHz 200 - - MHz Turn-On Ti me ton VCC=-30V,VBE=-0.5V, IC=-150mA,IB=-15mA - - 45 ns Delay T ime td VCC=-30V,VBE=-0.5V, IC=-150mA,IB=-15mA - - 10 ns Rise Time tr VCC=-30V,VBE=-0.5V, IC=-150mA,IB1=-15mA - - 40 ns Turn-Off Time toff VCC=-6V,IC=-150mA, IB1=IB2=-15mA - - 100 ns Storage Time ts VCC=-6V,IC=-150mA, IB1=IB2=-15mA - - 80 ns Fall Time tf VCC=-6V,IC=-150mA, IB1=IB2=-15mA - - 30 ns ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted)

PAGE . 3May 12.2010-REV.00 MMDT2907A 3.0 2.0 1.0 0.7 0.5 0.3 0.2 I , COLLECTOR CURRENT (mA)C -1.0 -0.8 -0.6 -0.4 -0.2 300 200 100 7.0 5.0 3.0 I , COLLECTOR CURRENTC 500 300 200 100 7.0 5.0 I , COLLECTOR CURRENT (mA)C Fig.1-DC Cuttent GainFig.1-DC Cuttent Gain Fig.2-Collector Saturation RegionFig.2-Collector Saturation Region h , NORMALIZED CURRENT GAIN FE I , BASE CURRENT (mA)B V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Fig.3-Turn-On Time Fig.4-Turn-Off Time t, TIME (ns) t, TIME (ns) T =125 CJ O 25 C O -55 C O -500mA-100mA-10mA tr t =t -1/8t ss f I =-1.0mAC VCE=-1.0V VCE=-10V V =-30V I/ I= 1 0 T= 2 5 C CC CB J O V =-30V I/ I= 1 0 T= 2 5 C CC CB J IIB1= B2 O td@ V =0VBE(OFF) 2.0V tf

PAGE . 4May 12.2010-REV.00 MMDT2907A 8.0 6.0 4.0 2.0 f, FREQUENCY (kHz) NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 8.0 6.0 4.0 2.0 R , SURGE RESISTANCE (OHMS) S 400 300 200 100 7.0 5.0 3.0 2.0 -1.0 -0.8 -0.6 -0.4 -0.2 I , COLLECTOR CURRENT (mA)C +0.5 -0.5 -1.0 -1.5 -2.0 -2.5 I , COLLECTOR CURRENT (mA)C I =-1.0mA,R =430 -500 A,R =560 -50 A,R =2.7k -100 A,R =1.6 CS S /c87 /c109/c87 /c109/c87 /c109/c87 S S k I =-50 A -100 A -500 A -1.0mA C /c109 /c109 /c109 R =OPTIMUM SOURCE RESISTANCES f=1.0kHz Ceb Ccb V =-20V T= 2 5 C CE J O T= 2 5 CJ O V@ I / I = 1 0BE(sat) C B V @V =-10VBE(on) CE V@CE(sat) I/ I= 1 0CB Rf o r V/c81VC CE(sat) Rf o r V/c81VB BE REVERSE VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mA)C C, CAPACITANCE (pF) f , CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) T COEFFICIENT (mV/ C) O V, VOLTAGE (VOLTS) Fig.5-Frequency EffectsFig.5-Frequency Effects Fig.6-Source Resistance EffectsFig.6-Source Resistance Effects Fig.8-Current-Gain-Bandwidth ProductFig.8-Current-Gain-Bandwidth ProductFig.7-Capacitances Fig.9-On VoltageFig.9-On Voltage Fig.10-Temperature CoefficientsFig.10-Temperature Coefficients

PAGE . 5May 12.2010-REV.00 MOUNTING PAD LAYOUT

  • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel ORDER INFORMATION LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. MMDT2907A