MMDT2227 SECOS | Alldatasheet
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Any changing of specification will not be informed individual MMDT2227 NPN-PNP Silicon Multi-Chip Transistor R o H S C o m p l i a n t P r o d u c t http://www.SeCoSGmbH.com Elektronische Bauelemente * Features Power dissipation PCM : 0.2 W (Tamp.= 25 C) Collector current ICM : 0.2/-0.2 A Collector-base voltage V(BR)CBO : 75/-60 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O O Electrical Characteristics( Tamb=25 O C unless otherwise specified) C2 B1 E1 E2 B2 C1 NPN2222A ELECTRICAL CHARACTERISTICS （Tamb=25℃ unless otherwise specified ） P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10μA,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO Ic=10mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 10 nA Emitter cut-off current IEBO VEB=3V,IC=0 10 nA DC current gain hFE VCE=10V,IC=150mA 100 300 VCE(sat)1 IC=150mA,IB=15mA 0.3 V Collector-emitter saturation voltage VCE(sat)2 IC=500mA,IB=50mA 1 V VBE(sat)1 IC=150mA,IB=15mA 1.2 V Base -emitter saturation voltage VBE(sat)2 IC=500mA,IB=50mA 2 V Transition frequency fT VCE=20V,IC=20mA,f=100MHz 300 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 8 pF Noise Figure NF VCE=10V,Ic=0.1mA, f=1KHZ,Rs=1KΩ 4 dB 01-Jan-2006 Rev. B Page 1 of 6 SOT-363 Dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026TYP (0.65TYP) .096(2.45) .085(2.15) .021REF (0.525)REF .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) o o
Figure 1. Turn–On Time Figure 2. Turn–Off Time *Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 7. Frequency Effects Figure 8. Source Resistance Effects Figure 9. Capacitances Figure 10. Current–Gain Bandwidth Product Figure 11. “On” Voltages
0.2 V, Voltage (V)
Figure 12. Temperature Coefficients