MMDT2227
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 10
Technical content
Document number: DS30122 Rev: 13 - 2 1 of 10 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. MMDT2227 ADVANCE INFORMATION COMPLEMENTARY NPN / PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features & Benefits Complementary Pairs: One 2222A Type (NPN) One 2907A Type (PNP) Ideal for Low-Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) An automotive-compliant part is available under separate datasheet (DIODES™ MMDT2227Q) Mechanical Data Package: SOT363 Package Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Packing Qty. Carrier MMDT2227-7-F K27 7 8 3,000 Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 Code J K L M N O P R S T U V Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Device Symbol SOT363 Top View Pin-Out K27 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: J = 2022) M or M = Month (ex: 2 = February) K 27 YM
© 2023 Copyright Diodes Incorporated. All Rights Reserved. Notes: 5. For the device mounted on minimum recommended pad layout FR -4, device is measured under still air conditions whilst operating in a steady -state.
- Thermal resistance from junction to the top of package .
- Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Figure 1. PD v TA
Document number: DS30122 Rev: 13 - 2 3 of 10 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. MMDT2227 ADVANCE INFORMATION Electrical Characteristics, 2222A Type (NPN) (@ Tamb = +25°C, unless otherwise specified.) Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Collector-Base Breakdown Voltage BVCBO 75 V IC = 100μA Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 10mA Emitter-Base Breakdown Voltage BVEBO 6.0 V IE = 100μA Collector Cutoff Current ICBO 10 nA VCB = 60V VCB = 60V, Tamb = +150C Collector Cutoff Current ICEX 10 nA VCE = 60V, VEB(off) = 3.0V Emitter Cutoff Current IEBO 10 nA VEB = 5.0V Base Cutoff Current IBL 20 nA VCE = 60V, VEB(off) = 3.0V ON CHARACTERISTICS (Note 8) DC Current Gain hFE 100 300 IC = 100μA, VCE = 10V IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, Tamb = -55C IC = 150mA, VCE = 1V Collector-Emitter Saturation Voltage VCE(sat) 0.3
1.0 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(sat) 0.6 1.2
2.0 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 8 pF VCB = 10V, f = 1MHz Input Capacitance Cibo 25 pF VEB = 0.5V, f = 1MHz Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF 4.0 dB VCE = 10V, IC = 100μA, RS = 1kΩ f = 1kHz SWITCHING CHARACTERISTICS Delay Time td 10 ns VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA Rise Time tr 25 ns Storage Time ts 225 ns VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA Fall Time tf 60 ns Note: 8. Pulse test: Pulse width 300s, duty cycle 2%.
Document number: DS30122 Rev: 13 - 2 6 of 10 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. MMDT2227 ADVANCE INFORMATION Electrical Characteristics, 2907A Type (PNP) (@Tamb = +25°C, unless otherwise specified.) Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Collector-Base Breakdown Voltage BVCBO -60 V IC = -100μA Collector-Emitter Breakdown Voltage BVCEO -60 V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -6.0 V IE = -100μA Collector Cutoff Current ICBO -10 nA VCB = -50V VCB = -50V, Tamb = +125C Collector Cutoff Current ICEX -50 nA VCE = -30V, VEB(off) = -0.5V Base Cutoff Current IBL -50 nA VCE = -30V, VEB(off) = -0.5V ON CHARACTERISTICS (Note 9) DC Current Gain hFE 100 100 100 300 IC = -100µA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(sat) -0.4 -1.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(sat) -1.3 -2.6 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 8.0 pF VCB = -10V, f = 1MHz Input Capacitance Cibo 30 pF VEB = -2V, f = 1MHz Current Gain-Bandwidth Product fT 200 MHz VCE = -20V, IC = -50mA, f = 100MHz SWITCHING CHARACTERISTICS Turn-On Time ton 45 ns Delay Time td 10 ns VCC = -30V, IC = -150mA, IB1 = -15mA Rise Time tr 40 ns Turn-Off Time toff 100 ns Storage Time ts 80 ns VCC = -6V, IC = -150mA, IB1 = IB2 = -15mA Fall Time tf 30 ns Note: 9. Short duration pulse test used to minimize self-heating effect.
Document number: DS30122 Rev: 13 - 2 9 of 10 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. MMDT2227 ADVANCE INFORMATION Package Outline Dimensions Please see https://www.diodes.com/design/support/packaging/diodes-packaging/ for the latest version. SOT363 SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see https://www.diodes.com/design/support/packaging/diodes-packaging/ for the latest version. SOT363 Dimensions Value (in mm) C 0.650 G 1.300 X 0.420 Y 0.600 Y1 2.500 e D L b E F c a Y1 G Y X C
Document number: DS30122 Rev: 13 - 2 10 of 10 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. MMDT2227 ADVANCE INFORMATION IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is fo r informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diode s’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes ’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, a nd appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. 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