DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
WEJ ELECTRONIC CO.,LTD MMDT2222A TRANSISTOR (NPN)
FEATURES
P CM: 0 . 1 5 W ( T a m b = 2 5 ℃ ) Collector current I CM: 0 . 6 A Collector-base voltage V (BR)CBO: 7 5 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 10µA, I E=0 75 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, I B=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current I CBO V CB=60V, IE=0 0. 01 µA Emitter cut-off current I EBO V EB= 3V, IC=0 0. 01 µA h FE(1) V CE=10V, IC= 0.1mA 35 h FE(2) V CE=10V, IC= 1mA 50 h FE(3) V CE=10V, IC= 10mA 75 h FE(4) V CE=10V, IC= 150mA 100 300 h FE(5) V CE=10V, IC= 500mA 40 DC current gain h FE(6) V CE=1V, IC= 150mA 35 VCE(sat)1 I C=150 mA, IB= 15mA 0.3 V Collector-emitter saturation voltage VCE(sat)2 I C=500 mA, IB= 50mA 1 V VBE(sat)1 I C=150 mA, IB=15mA 0.6 1.2 V Base-emitter saturation voltage VBE(sat)2 I C=500 mA, IB= 50mA 2 V Transition frequency f T VCE=20V, IC= 20mA f=100MHz
300 MHz
VCB=10V, IE= 0 f=1MHz 8 pF Input Capacitance Cib VEB=0.5V, IC= 0 f=1MHz 25 pF Noise Figure NF VCE=10V, IC=100µA f=1KHz,Rs=1K Ω 4 dB Delay time t d 10 nS Rise time t r VCC=30V, IC=150mA VBE(off)=0.5V, IB1=15mA 25 nS Storage time t S 225 nS Fall time t f VCC=30V, IC=150mA IB1= IB2= 15mA 60 nS Marking :K1P MMDT 2222A Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS