MMDT2222A PANJIT | Alldatasheet

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Technical content

DUAL SURFACE MOUNT NPN TRANSISTORS 6FEATURES

APPLICATIONS

This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. Electrically Isolated Dual NPN Switching Transistor General Purpose Amplifier Applications Hand-Held Computers, PDAs Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Voltage Collector Current Total Power Dissipation (Note 1) Operating Junction Temperature Range Storage Temperature Range 1/2/2006 Page 1 www.panjit.com 75 V V40 V6.0 mA600 200 mW °C-55 to +150 °C-55 to +150 V V V I P T T CBO CEO EB C D stg T = 25°C Unless otherwise noted J J Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout SOT- 363 THERMAL CHARACTERISTICS Characteristic Symbol Units thjaThermal Resistance, Junction to Ambient (Note 1) 625 Value R °C/W Lead-Free Plating (100% matte tin finish) Device Marking Code: M2A 2 654 13 2 654

V = 30V, I =150mA V (off) = -0.5V, I = 15mA I = 10uA www.panjit.com1/2/2006 Page 2 ELECTRICAL CHARACTERISTICS (Each Transistor) T = 25°C Unless otherwise notedJ C Parameter Symbol Min Units Collector-Emitter Breakdown Voltage Conditions Typ Max V(BR)CEO 40 - - VC 75 - - V Note 2. Short duration test pulse used to minimize self-heating (BR)CBOVCollector-Base Breakdown Voltage I = 10mA I = 10uA EEmitter-Base Breakdown Voltage (BR)EBOV V = 60V, V = 3.0VEBCEICEXCollector Cutoff Current 6.0 - - V - - 10 nA Base Cutoff Current IBL DC Current Gain (Note 2) hFE - - 20 nA - - 0.3 V - - 1.0 V 35 - - Collector-Emitter Saturation Voltage (Note 2) CE(SAT)V I = 150mA, I = 15mACB I = 500mA, I = 50mACB Base-Emitter Saturation Voltage (Note 2) BE(SAT)V 0.6 - 1.2 V - - 2.0 Gain-Bandwidth Product Tf 300 - - MHz Collector-Base Capacitance CBOC - - 8.0 pFCBV = 10V, f =1.0MHz V = 20V, I = 20mA f = 100MHz Emitter-Base Capacitance EBOC- - 2 5 p FEBV = 0.5V, f =1.0MHz MMDT2222A 50 - - 75 - - 50 - - - 100 - 300 I = 0.1mA, V = 10V CEC Delay Time dt- - 1 0 n sCC Rise Time rt- - 2 5 n s Storage Time st - - 225 ns Fall Time ft - 60 ns V = 60V, V = 3.0VEBCE I = 1.0mA, V = 10VCEC I = 10mA, V = 10VCEC I =10mA, V =10V, T =-55CCEC I = 150mA, V = 10VCEC I = 150mA, I = 15mACB I = 500mA, I = 50mACB CCE BE C V = 30V, I =150mA I = I = 15mA CC C B2B1 40 - -I = 500mA, V = 10VCEC 35 - -I = 150mA, V = 1.0VCEC J

0.1 1 10 100 Revers e Voltage, V R (V) Capacitance (p F CIB (EB) COB (CB) f=1 MHz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 Collector Current, IC (mA) VBE (sat) (V) TJ = 25 °C TJ = 150 °C IC/IB = 10 TJ = 100 °C 100 150 200 250 300 350 400 450 500 0.1 1 10 100 1000 Collector Current, I C (mA) VCE (sat) (mV) TJ = 25 °C TJ = 150 °C IC/IB = 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 1 10 100 1000 Collector Current, I C (mA) VBE (on) TJ = 25° C TJ = 150° C TJ = 100°C VCE = 10V 100 150 200 250 300 350 0.1 1 10 100 1000 Collector Current, I C (mA) hFE TJ = 25° C TJ = 150° C TJ = 100° C VCE = 10V MMDT2222A CHARACTERISTICS CURVES (Each Transistor) JT = 25°C Unless otherwise noted www.panjit.com1/2/2006 Page 3 Fig. 5. Capacitances

www.panjit.com1/2/2006 Page 4

ORDERING INFORMATION

MMDT2222A T/R7 - 3,000 units per 7 inch reel MMDT2222A T/R13 -10,000 units per 13 inch reel Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS MMDT2222A