MMDT2222A_13 BILIN | Alldatasheet

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Technical content

Dual NPN Small Signal Surface Mount Transistor MMDT2222A E001 www.gmicroelec.com R e v . A 1

FEATURES

z Epitaxial planar die construction. z Complementary PNP type available MMDT2907A. z Ultra-small surface mount package.

APPLICATIONS

z Dual NPN small signal surface mount transisto r. SOT-363

ORDERING INFORMATION

Type No. Marking Package Code MMDT2222A K1P SOT-363 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PD Power Dissipation 200 mW RθJA Thermal Resistance, Junction to Ambient 625 ℃/W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ Pb Lead-free

Dual NPN Small Signal Surface Mount Transistor MMDT2222A E001 www.gmicroelec.com R e v . A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V (BR)CBO IC=10μA IE=0 75 - V Collector-emitter breakdown voltage V (BR)CEO IC=10mA IB=0 40 - V Emitter-base breakdown voltage V (BR)EBO IE=10μA IC=0 6 - V Collector cut-off current I CBO VCB=60V IE=0 VCB=60V IE=0 TA=150℃ - 10 nA μA Collector cut-off current I CEX VCE=60V IEB(off)=3.0V - 10 nA Emitter cut-off current I EBO VEB=3V IC=0 - 10 nA Base Cut-off Current I BL VCE=60V IEB(off)=3.0V - 20 nA VCE=10V IC=100μA 35 - VCE=10V IC=1.0mA 50 - VCE=10V IC=10mA 75 - VCE=10V IC=150mA 100 300 VCE=10V IC=500mA 40 - VCE=10V IC=10mA TA=-55℃ 50 - DC current gain h FE VCE=1.0V IC=150mA 35 - Collector-emitter saturation voltage V CE(sat) IC=150mA IB=15mA IC=500mA IB=50mA - 0.3 1.0 V Base-emitter saturation voltage V BE(sat) IC=150mA IB=15mA IC=500mA IB=50mA 0.6 1.2 2.0 V Transition frequency f T VCE=20V IC=20mA f=100MHz 300 MHz Output Capacitance C obo VCB=10V,f=1.0MHz,IE=0 - 8 pF Input Capacitance C ibo VEB=0.5V,f=1.0MHz,IC=0 - 25 pF Noise Figure NF VCE=10V,f=1.0kHz,IC=100μA RS=1.0kΩ - 4.0 dB Delay time t d 10 ns Rise time t r Vcc=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 25 ns Storage time t s 225 ns Fall time t f VCC=30V, IC=150mA IB1=-IB2=15mA 60 ns

Dual NPN Small Signal Surface Mount Transistor MMDT2222A E001 www.gmicroelec.com R e v . A 3 PACKAGE OUTLINE Plastic surface mounted package SOT-363 SOLDERING FOOTPRINT Unit : mm

PACKAGE INFORMATION

A 2.00 2.20 B 1.15 1.35 C 0.95 Typical D 0.25 Typical E 0.25 0.40 G 0.60 0.70 H 0.02 0.10 J 0.10 Typical K 2.2 2.4 All Dimensions in mm Device Package Shipping MMDT2222A SOT-363 3000/Tape&Reel 0.50 0.40 1.90 0.650.65 A B C D E G K J H