MMDT2222A DIODES | Alldatasheet

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Maximum Ratings @ TA = 25/c176C unless otherwise specified A M J LD B C H K G F Mechanical Data /c183Case: SOT-363, Molded Plastic /c183Case Material - UL Flammability Rating Classification 94V-0 /c183Moisture sensitivity: Level 1 per J-STD-020A /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Terminal Connections: See Diagram /c183Marking (See Page 2): K1P /c183Ordering & Date Code Information: See Page 2 /c183Weight: 0.006 grams (approx.) MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Characteristic Symbol MMDT2222A Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 600 mA Power Dissipation (Note 1, 2) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1) R/c113JA 625 /c176C/W Operating and Storage and Temperature Range Tj,T STG -55 to +150 /c176C Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J /c190 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 /c97 0° 8° All Dimensions in mm

DS30125 Rev. 5 - 2 2 of 3 MMDT2222A www.diodes.com Electrical Characteristics @ TA = 25/c176C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage V(BR)CBO 75 /c190 V IC = 10/c109A, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 /c190 V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 /c190 V IE = 10/c109A, IC = 0 Collector Cutoff Current ICBO /c190 10 nA /c109A VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150/c176C Collector Cutoff Current ICEX /c190 10 nA VCE = 60V, VEB(OFF) = 3.0V Emitter Cutoff Current IEBO /c190 10 nA VEB = 3.0V, IC = 0 Base Cutoff Current IBL /c190 20 nA VCE = 60V, VEB(OFF) = 3.0V ON CHARACTERISTICS (Note 3) DC Current Gain hFE 100 /c190 /c190 /c190 300 /c190 /c190 /c190 /c190 I C = 100/c109A, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, V CE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55/c176C IC = 150mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) /c190 0.3

1.0 V IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA Base- Emitter Saturation Voltage VBE(SAT) 0.6 /c190 1.2

2.0 V IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo /c190 8p F VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo —2 5p F VEB = 0.5V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 300 /c190 MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF /c190 4.0 dB VCE = 10V, IC = 100/c109A, RS = 1.0k/c87/c44f = 1.0kHz SWITCHING CHARACTERISTICS Delay Time td /c190 10 ns VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mARise Time tr /c190 25 ns Storage Time ts /c190 225 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mAFall Time tf /c190 60 ns Ordering Information (Note 4) Device Packaging Shipping MMDT2222A-7 SOT-363 3000/Tape & Reel Notes: 3. Short duration test pulse used to minimize self-heating effect. Marking Information K1P YM K1P YM K1P = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code JKL MN P R ST U VW Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 123 45 6 7 89 OND

DS30125 Rev. 5 - 2 3 of 3 MMDT2222A www.diodes.com 1.0 5.0 0.1 101.0 50 CAPACITANCE (pF) REVERSE VOLTS (V) Fig. 1 Typical Capacitance Cobo Cibo 0.001 0.01 1 100.1 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 I BASE CURRENT (mA)B Fig.2 Typical Collector Saturation Region V COLLECTOR-EMITTER VOLTAGE (V)CE I= 1 m AC I = 10mAC I = 30mAC I = 100mAC I = 300mAC