MMDT1N434 SEMTECH_ELEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Features
- With built-in bias resistors
- Simplify circuit design
- Reduce a quantity of parts and manufacturing process Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage V CBO 50 V Collector Emitter Voltage V CEO 50 V Emitter Base Voltage V EBO 6 V Collector Current I C 100 mA Power Dissipation P tot 200 mW Junction Temperature T j 150 OC Storage Temperature Range T S - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 5 V, IC = 5 mA hFE 50 - - - Collector Base Cutoff Current at VCB = 50 V ICBO - - 0.1 µA Collector Emitter Breakdown Voltage at IC = 100 µA V(BR)CEO 50 - - V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA VCE(sat) - - 0.3 V Input On Voltage at VCE = 0.2 V, IC = 5 mA VI(on) - - 1.7 V Input Off Voltage at VCE = 5 V, IC = 100 µA VI(off) 0.5 - - V Input Resistor R 1 3.29 4.7 6.11 K Ω Input Resistor R 2 15.4 22 28.6 K Ω Resistance Ratio R 2 / R1 3.6 4.5 5.5 - Transition Frequency at VCE = 10 V, -IE = 5 mA, f = 100 MHz fT - 250 - MHz SOT-23 Plastic Package Base (Input) Emitter (Common) Collector (Output)