MMDL770 BILIN | Alldatasheet
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Technical content
Schottky Barrier Diode MMDL770 B048 www.gmicroelec.com R e v . A 1
FEATURES
z Low reverse leakage—I R=200nA(Max.). z Very Low Capacitance—1.0pF @20V. z Extremely Low minority carrier lifetime. z High reverse leakage—70V(min.) A P P L I C A T I O N S z For high-efficiency UHF and VHF detecto r a p p l i c a t i o n s . SOD-323
ORDERING INFORMATION
Type No. Marking Package Code M M D L 7 7 0 5 H S O D - 3 2 3 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit DC Reverse Voltage VR 70 V Power Dissipation PD 200 mW Thermal resistance,junction to ambient air RθjA 635 ℃/W Junction temperature Tj 150 ℃ Storage temperature TSTG -55 to+150 ℃ Pb Lead-free
Schottky Barrier Diode MMDL770 B048 www.gmicroelec.com R e v . A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakdown Voltage V(BR)R 70 I R=10uA Forward voltage VF 0.7 1.0 V I F=10mA Reverse current IR 9.0 200 nA V R=35V Capacitance between terminals CT 0.5 1.0 pF V R=20V,f=1MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Schottky Barrier Diode MMDL770 B048 www.gmicroelec.com R e v . A 3 PACKAGE OUTLINE Plastic surface mounted package SOD-323 SOLDERING FOOTPRINT Unit ：mm
PACKAGE INFORMATION
MMDL770 SOD-323 3000/Tape&Reel SOD-323 Dim Min Max A 1.60 1.80 B 1.20 1.40 C 0.9 Max D 0.30 Typical E 0.22 0.42 H 0.02 0.1 J 0.1 Typical K 2.55 2.75 All Dimensions in mm 1.60 0.63 0.83 2.85 D A K C B H J E
Schottky Barrier Diode MMDL770 B048 www.gmicroelec.com R e v . A 4