MMDFS6N303 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Power MOSFET with Low VF
  • Lower Component Placement and Inventory Costs along with Board Space Savings
  • Logic Level Gate Drive — Can be Driven by Logic ICs
  • Mounting Information for SO−8 Package Provided
  • Applications Information Provided
  • R2 Suffix for Tape and Reel (2500 units/13″ reel)
  • Marking: 6N303 MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 1.0 M/C0087) VDGR 30 Vdc Gate−to−Source Voltage — Continuous VGS /C003420 Vdc Drain Current (Note 2) − Continuous @ TA = 25°C − Single Pulse (tp /C0118 10 /C0109s) ID IDM 6.0 Adc Apk Total Power Dissipation @ TA = 25°C (Note 2) PD 2.0 Watts Single Pulse Drain−to−Source Avalanche Energy — Startin T J = 25°C VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 /C0087 EAS 325 mJ 1. Pulse Test: Pulse Width ≤250 /C0109s, Duty Cycle ≤ 2.0%. 2. Mounted on 2 ″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. Anode 1 Top View Anode Source Gate Cathode Cathode Drain Drain D S G N−Channel MARKING DIAGRAM PIN ASSIGNMENT

6 AMPERES

30 VOLTS

RDS(on) = 35 m/C0087 VF = 0.42 Volts http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Device Package Shipping †

ORDERING INFORMATION

MMDFS6N303R2 SO −8 2500/Tape & Reel SO−8 CASE 751 STYLE 18 6N303 ALYW A = Assembly Location L = Wafer Lot Y = Year W = Work Week

http://onsemi.com SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage VRRM VR Average Forward Current (Note 3) (Rated VR) TA = 104°C IO 2.0 Amps Peak Repetitive Forward Current (Note 3) (Rated VR, Square Wave, 20 kHz) TA = 108°C Ifrm 4.0 Amps Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Ifsm 30 Amps THERMAL CHARACTERISTICS — SCHOTTKY AND MOSFET Thermal Resistance — Junction −to−Ambient (Note 4) — MOSFET R/C0113JA 167 °C/W Thermal Resistance — Junction −to−Ambient (Note 5) — MOSFET R/C0113JA 97 Thermal Resistance — Junction −to−Ambient (Note 2) — MOSFET R/C0113JA 62.5 Thermal Resistance — Junction −to−Ambient (Note 4) — Schottky R/C0113JA 197 Thermal Resistance — Junction −to−Ambient (Note 5) — Schottky R/C0113JA 97 Thermal Resistance — Junction −to−Ambient (Note 3) — Schottky R/C0113JA 62.5 Operating and Storage Temperature Range Tj, Tstg −55 to 150 MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 6) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Voltage (VGS = 0 Vdc, ID = 0.25 mA) Temperature Coefficient (Positive) V(BR)DSS Vdc mV/°C Zero Gate Drain Current (VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 1.0 /C0109Adc Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (Note 6) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) Temperature Coefficient (Negative) VGS(th) 1.0 Vdc Static Drain−Source Resistance (VGS = 10 Vdc, ID = 5.0 Adc) (VGS = 4.5 Vdc, ID = 3.9 Adc) RDS(on) m/C0087 Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) gFS — 9.0 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 430 600 pF Output Capacitance Coss — 217 300 Reverse Transfer Capacitance Crss — 67.5 135 4. Mounted with minimum recommended pad size, PC Board FR4. 6. Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤ 2.0%.

http://onsemi.com MOSFET ELECTRICAL CHARACTERISTICS − continued (TC = 25°C unless otherwise noted) (Note 7) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 8) Turn−On Delay Time (VDD = 15 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, RG = 6.0 Ω) td(on) — 8.2 16.5 ns Rise Time tr — 8.5 17 Turn−Off Delay Time td(off) — 89.6 179 Fall Time tf — 61.1 122 Gate Charge (VDS = 15 Vdc, ID = 5.0 Adc, VGS = 10 Vdc) QT — 15.7 31.4 nC Q1 — 2.0 — Q2 — 4.6 — Q3 — 3.9 — DRAIN SOURCE DIODE CHARACTERISTICS Forward On−Voltage (Note 7) (IS = 1.7 Adc, VGS = 0 Vdc) VSD — 0.77 1.2 Vdc Reverse Recovery Time (VGS = 0 V, IS = 5.0 A, dIS/dt = 100 A//C0109s) trr — 54.5 — ns ta — 14.8 — tb — 39.7 — Reverse Recovery Stored Charge QRR — 0.048 — /C0109C SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Maximum Instantaneous Forward Voltage (Note 7) IF = 100 mAdc IF = 3.0 Adc IF = 6.0 Adc VF TJ = 25°C TJ = 125°C Volts 0.28 0.42 0.50 0.13 0.33 0.45 Maximum Instantaneous Reverse Current (Note 7) VR = 30 V IR TJ = 25°C TJ = 125°C /C0109A 250 — — 25 mA Maximum Voltage Rate of Change V R = 30 V dV/dt 10,000 V//C0109s 7. Pulse Test: Pulse Width ≤300 /C0109s, Duty Cycle ≤ 2.0%. 8. Switching characteristics are independent of operating junction temperature.

Figure 13. FET Thermal Response Figure 14. Diode Reverse Recovery Waveform

0.01 CHIP

Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage

Figure 22. Schottky Thermal Response

http://onsemi.com TYPICAL APPLICATIONS LOADVoutCO Vin LOADVoutCO Vin STEP UP SWITCHING REGULATORS Boost Regulator Buck−Boost Regulator Vin MULTIPLE BATTERY CHARGERS BATT #1 BATT #2 Buck Regulator/Charger CO LOQ1

http://onsemi.com TYPICAL APPLICATIONS Li−lon BATTERY PACK APPLICATIONS Battery Pack DISCHARGE CHARGE SMART IC Li−Ion BATTERY CELLS PACK + PACK − SCHOTTKY SCHOTTKY Q1 Q2

  • Applicable in battery packs which require a high current level.
  • During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge.
  • During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation.
  • Under normal operation, both transistors are on.

http://onsemi.com PACKAGE DIMENSIONS SO−8 CASE 751−07 ISSUE AB *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* SEATING PLANE N J X 45/C0095 K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A B S DH C 0.10 (0.004) DIM A MIN MAX MIN MAX INCHES 4.80 5.00 0.189 0.197 MILLIMETERS B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8 N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 −X− −Y− G MYM0.25 (0.010) −Z− YM0.25 (0.010) Z S X S M /C0095/C0095/C0095/C0095 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 SCALE 6:1 /C0466mm inches/C0467 STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 MMDFS6N303/D FETKY is a trademark of International Rectifier Corporation. LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.