MMDFS2P102 MOTOROLA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

1Motorola TMOS Product Preview Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 /C0070/C0069/C0084/C0075/C0089 MOSFET and Schottky Rectifier The FETKY  product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Manage- ment in Battery Packs, Chargers, Cell Phones and other Portable Products.

  • HDTMOS Power MOSFET with Low V F, Low IR Schottky Rectifier
  • Lower Component Placement and Inventory Costs along with Board Space Savings
  • Logic Level Gate Drive — Can be Driven by Logic ICs
  • Mounting Information for SO–8 Package Provided
  • IDSS Specified at Elevated Temperature
  • Applications Information Provided MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (1) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 20 Vdc Drain–to–Gate Voltage (RGS = 1.0 M/C0087) VDGR 20 Vdc Gate–to–Source Voltage — Continuous VGS /C003420 Vdc Drain Current (3)— Continuous @ TA = 25°C — Continuous @ TA = 100°C — Single Pulse (tp /C0118 10 /C0109s) ID ID IDM 3.3 2.1 Adc Apk Total Power Dissipation @ TA = 25°C (2) PD 2.0 Watts Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 /C0087 EAS 324 mJ SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage VRRM VR

20 Volts

Average Forward Current (3) (Rated VR ) TA = 100°C IO 1.0 Amps Peak Repetitive Forward Current (3) (Rated VR , Square Wave, 20 kHz) TA = 105°C Ifrm 2.0 Amps Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Ifsm 20 Amps DEVICE MARKING ORDERING INFORMATION 2P102 Device Reel Size Tape Width Quantity 2P102 MMDFS2P102R2 13″ 12 mm embossed tape 2500 units (1) Negative sign for P–channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%. Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. HDTMOS and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. FETKY is a trademark of International Rectifier. Order this document by MMDFS2P102/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0077/C0068/C0070/C0083/C0050/C0080/C0049/C0048/C0050 P–Channel Power MOSFET with Schottky Rectifier R DS(on) = 0.16 /C0087 VF = 0.39 Volts CASE 751–05, Style 18 (SO–8) A A S G C C D D TOP VIEW  Motorola, Inc. 1997

/C0077/C0077/C0068/C0070/C0083/C0050/C0080/C0049/C0048/C0050

2 Motorola TMOS Product Preview Data

THERMAL CHARACTERISTICS — SCHOTTKY AND MOSFET Thermal Resistance — Junction–to–Ambient (1) — MOSFET R /C0113JA 167 °C/W Thermal Resistance — Junction–to–Ambient (2) — MOSFET R /C0113JA 100 Thermal Resistance — Junction–to–Ambient (3) — MOSFET R /C0113JA 62.5 Thermal Resistance — Junction–to–Ambient (1) — Schottky R /C0113JA 204 Thermal Resistance — Junction–to–Ambient (2) — Schottky R /C0113JA 122 Thermal Resistance — Junction–to–Ambient (3) — Schottky R /C0113JA 83 Operating and Storage Temperature Range Tj, Tstg –55 to 150 (1) Mounted with minimum recommended pad size, PC Board FR4. (2) Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State.

/C0077/C0077/C0068/C0070/C0083/C0050/C0080/C0049/C0048/C0050 3Motorola TMOS Product Preview Data MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (1) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Voltage (VGS = 0 Vdc, ID = 0.25 mA) Temperature Coefficient (Positive) V(BR)DSS Vdc mV/°C Zero Gate Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 1.0 µAdc Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (2) Gate Threshold Voltage (VDS = VGS , ID = 0.25 mA) Temperature Coefficient (Negative) VGS(th) 1.0 1.5 4.0 2.0 Vdc mV/°C Static Drain–Source Resistance (VGS = 10 Vdc, ID = 2.0 Adc) (VGS = 4.5 Vdc, ID = 2.5 Adc) R DS(on) 0.118 0.152 0.160 0.180 Ohms Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc) gFS 2.0 3.0 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 16 Vdc V 0 Vdc C iss — 420 588 pF Output Capacitance (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 290 406 Reverse Transfer Capacitance f = 1.0 MHz) C rss — 116 232 SWITCHING CHARACTERISTICS (3) Turn–On Delay Time (V 10 Vd I 2 0 Ad td(on) — 19 38 ns Rise Time (VDS = 10 Vdc, ID = 2.0 Adc, VGS =45V d c tr — 66 132 Turn–Off Delay Time VGS = 4.5 Vdc, R G = 6.0 Ω ) td(off) — 25 50 Fall Time G ) tf — 37 74 Gate Charge (V 16 Vd I 2 0 Ad Q T — 15 20 nC (VDS = 16 Vdc, ID = 2.0 Adc, Q 1 — 1.2 —( DS , D , VGS = 10 Vdc) Q 2 — 5.0 — Q 3 — 4.0 — DRAIN SOURCE DIODE CHARACTERISTICS Forward On–Voltage (2) (IS = 2.0 Adc, VGS = 0 Vdc) VSD — 1.5 2.1 V Reverse Recovery Time (I 2 0 Ad V 15 V trr — 38 — ns (IS = 2.0 Adc, VDD = 15 V, ta — 17 —(S , DD , dIS/dt = 100 A/µs) tb — 21 — Reverse Recovery Stored Charge Q RR — 0.034 — µC SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Maximum Instantaneous Forward Voltage (2) I1 0 A VF TJ = 25°C TJ = 125°C Volts IF = 1.0 A IF = 2.0 A 0.47 0.58 0.39 0.53 Maximum Instantaneous Reverse Current (2) V2 0 V IR TJ = 25°C TJ = 125°C mA VR = 20 V 0.05 10 Maximum Voltage Rate of Change V R = 20 V dV/dt 10,000 V//C0109s (1) Negative sign for P–channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2.0%. (3) Switching characteristics are independent of operating temperature.

4 Motorola TMOS Product Preview Data

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics Figure 3. On–Resistance versus Figure 4. On–Resistance versus Drain Current Figure 5. On–Resistance Variation with Figure 6. Drain–To–Source Leakage

6 Motorola TMOS Product Preview Data

Figure 13. FET Thermal Response Figure 14. Diode Reverse Recovery Waveform Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage

8 Motorola TMOS Product Preview Data

Figure 22. Schottky Thermal Response

/C0077/C0077/C0068/C0070/C0083/C0050/C0080/C0049/C0048/C0050 9Motorola TMOS Product Preview Data TYPICAL APPLICATIONS LOADVoutC O Vin LOADVoutC O Vin LO LO STEP DOWN SWITCHING REGULATORS Buck Regulator Synchronous Buck Regulator LOADVoutC O Vin LOADVoutC O Vin STEP UP SWITCHING REGULATORS Boost Regulator Buck–Boost Regulator

/C0077/C0077/C0068/C0070/C0083/C0050/C0080/C0049/C0048/C0050

10 Motorola TMOS Product Preview Data

BATT #1 BATT #2 Buck Regulator/Charger C O LOQ1 Li–lon BATTERY PACK APPLICATIONS Battery Pack DISCHARGE CHARGE SMART IC Li–Ion BATTERY CELLS PACK + PACK – SCHOTTKY SCHOTTKY Q1 Q2

  • Applicable in battery packs which require a high current level.
  • During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge.
  • During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation.
  • Under normal operation, both transistors are on.

/C0077/C0077/C0068/C0070/C0083/C0050/C0080/C0049/C0048/C0050 11Motorola TMOS Product Preview Data mm inches 0.060 1.52 0.275 7.0 0.024 0.6 0.050 1.270 0.155 4.0 SO–8 FOOTPRINT PACKAGE DIMENSIONS CASE 751–05 SO–08 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. SEATING PLANE C K 4X P A0.25 (0.010)M TB SS 0.25 (0.010)M B M 8X D R M J X 45 /C0095 /C0095 F –A– –B– –T– DIM MIN MAX MIN MAX INCHESMILLIMETERS A 4.80 5.00 0.189 0.196 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.18 0.25 0.007 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019 /C0095/C0095/C0095/C0095 G

/C0077/C0077/C0068/C0070/C0083/C0050/C0080/C0049/C0048/C0050

12 Motorola TMOS Product Preview Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET : http://motorola.com/sps MMDFS2P102/D◊