MMDF4P03HD ONSEMI | Alldatasheet

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© Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3

1 Publication Order Number:

4 A, 30 V, P−Channel SO−8, Dual

Dual MOSFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

  • Low RDS(on) Provides Higher Efficiency and Extends Battery Life
  • Logic Level Gate Drive − Can Be Driven by Logic ICs
  • Miniature SO−8 Surface Mount Package − Saves Board Space
  • Diode Is Characterized for Use In Bridge Circuits
  • Diode Exhibits High Speed, With Soft Recovery
  • IDSS Specified at Elevated Temperature
  • Mounting Information for SO−8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current − Continuous @ TA = 25°C Drain Current − Single Pulse (tp ≤ 10 /C0109s) ID IDM 4.0 Adc Apk Source Current − Continuous @ TA = 25°C IS 1.7 Adc Total Power Dissipation @ TA = 25°C (Note 1) PD 2.0 Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 /C0087) EAS 450 mJ Thermal Resistance − Junction−to−Ambient RθJA 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, (1/8″ from Case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1 Mounted on G10/FR4 glass epoxy board using minimum recommended

footprint. Source−1 1 Top View Gate−1 Source−2 Gate−2 Drain−1 Drain−1 Drain−2 Drain−2 P−Channel D S G

4 AMPERES

30 VOLTS

RDS(on) = 85 m/C0087 Device Package Shipping †

ORDERING INFORMATION

MMDF4P03HDR2 SO −8 2500 Tape & Reel SO−8, Dual CASE 751 STYLE 11 MARKING DIAGRAM A = Assembly Location Y = Year WW = Work Week PIN ASSIGNMENT Preferred devices are recommended choices for future use and best overall value. D S G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DP0303 AYWW http://onsemi.com

http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS 30 − − Vdc Zero Gate Voltage Drain Current (VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 1.0 μAdc Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 − − Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 3.5 Adc) (VGS = 4.5 Vdc, ID = 2.0 Adc) RDS(on) 0.075 0.125 0.085 0.16 Ω Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc) gFS − 6.0 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 425 600 pF Output Capacitance Coss − 209 300 Transfer Capacitance Crss − 57.2 80 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time (VDD = 15 Vdc, VGS = 10 Vdc, ID = 1.0 Adc, RG = 6.0 Ω) td(on) − 11.7 23.4 ns Rise Time tr − 15.8 31.6 Turn−Off Delay Time td(off) − 167.3 334.6 Fall Time tf − 102.6 205.2 Gate Charge (See Figure 8) (VDS = 10 Vdc, ID = 3.5 Adc, VGS = 10 Vdc) QT − 14.8 29.6 nC Q1 − 1.7 − Q2 − 4.7 − Q3 − 3.42 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 1.7 Adc, VGS = 0 Vdc) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.9 0.7 1.2 Vdc Reverse Recovery Time (IS = 3.5 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) trr − 77.4 − ns ta − 19.9 − tb − 57.5 − Reverse Recovery Stored Charge QRR − 0.088 − μC 2. Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature.

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage

1.4 VGS = 10 V

be charged by current from the generator. and Q2 and VGSP are read from the gate charge curve. on−state when calculating td(off). is difficult to measure and, consequently, is not specified. maintain a value of unity regardless of the switching speed. however, snubbing reduces switching losses. Figure 7. Capacitance Variation

http://onsemi.com PACKAGE DIMENSIONS SO−8 CASE 751−07 ISSUE AE SEATING PLANE N J X 45/C0095 K A B S DH C 0.10 (0.004) −X− −Y− G MYM0.25 (0.010) −Z− YM0.25 (0.010) Z S X S M 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 /C0466mm inches/C0467SCALE 6:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751 −01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. DIM A MIN MAX MIN MAX INCHES 4.80 5.00 0.189 0.197 MILLIMETERS B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8 N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 /C0095/C0095/C0095/C0095 STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MMDF4P03HD/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative