MMDF4C03HD MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0065/C0100/C0118/C0097/C0110/C0099/C0101 /C0073/C0110/C0102/C0111/C0114/C0109/C0097/C0116/C0105/C0111/C0110 Medium Power Surface Mount Products /C0067/C0111/C0109/C0112/C0108/C0101/C0109/C0101/C0110/C0116/C0097/C0114/C0121 /C0084/C0077/C0079/C0083 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114/C0115 MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

  • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
  • Logic Level Gate Drive — Can Be Driven by Logic ICs
  • Miniature SO–8 Surface Mount Package — Saves Board Space
  • Ideal for Synchronous Rectification
  • Diode Exhibits High Speed, With Soft Recovery
  • IDSS Specified at Elevated Temperature
  • Mounting Information for SO–8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Polarity Value Unit Drain–to–Source Voltage VDSS — 30 Vdc Gate–to–Source Voltage VGS — ± 20 Vdc Drain Current — Continuous ID N–Channel 5.5 Adc P–Channel 4.4 Drain Current — Pulsed IDM N–Channel 25 Apk P–Channel 20 Operating and Storage Temperature Range TJ, Tstg — –55 to +150 °C Total Power Dissipation @ TA = 25°C (1) PD 2.5 Watts Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 /C0087) EAS N–Channel 325 mJ (VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 /C0087) P–Channel 450 Thermal Resistance — Junction–to–Ambient (1) R θJA 50 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 sec. TL 260 °C DEVICE MARKING D4C03 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

ORDERING INFORMATION

Device Reel Size Tape Width Quantity MMDF4C03HDR2 13″ 12 mm embossed tape 2500 This document contains information on a new product. Specifications and information herein are subject to change without notice. HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MMDF4C03HD/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA  Motorola, Inc. 1997 N–Source 1 Top View N–Gate P–Source P–Gate Drain Drain Drain Drain P–G CASE 751–05, Style 11 SO–8 /C0077/C0077/C0068/C0070/C0052/C0067/C0048/C0051/C0072/C0068 COMPLEMENTARY DUAL TMOS POWER FET

30 VOLTS

N–CH R DS(on) = 50 m/C0087 P–CH R DS(on) = 85 m/C0087 Motorola Preferred Device N–S D P–S N–G REV 1

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2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Polarity Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS — 30 — — Vdc Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) IDSS (N) (P) 1.0 1.0 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — — ±100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) — 1.0 Vdc mV/°C Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.5 Adc) (VGS = 10 Vdc, ID = 3.5 Adc) R DS(on)1 (N) (P) 0.037 0.075 0.05 0.085 Ohms Static Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 2.5 Adc) (VGS = 4.5 Vdc, ID = 2.0 Adc) R DS(on)2 (N) (P) 0.55 0.125 0.08 0.16 Ohms Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc) gFS (N) (P) 9.0 6.0 mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 24 Vdc C iss (N) (P) 430 425 600 600 pF Output Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss (N) (P) 217 209 300 300 Transfer Capacitance f = 1.0 MHz) C rss (N) (P) 67.5 57.2 135 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (V 15 Vd td(on) (N) (P) 8.2 11.7 16.4 23.4 ns Rise Time (VDD = 15 Vdc, ID = 1.0 Adc, tr (N) (P) 8.48 15.8 16.9 31.6 Turn–Off Delay Time D , VGS = 10 Vdc, R G = 6.0 Ω ) td(off) (N) (P) 89.6 167.3 179 334.6 Fall Time tf (N) (P) 61.1 102.6 122 205.2 Total Gate Charge (See Figure 8) (V 10 Vd Q T (N) (P) 15.7 14.8 31.4 29.6 nC (VDS = 10 Vdc, ID =35A d c Q 1 (N) (P) 2.0 1.7 ID = 3.5 Adc, VGS = 10 Vdc) Q 2 (N) (P) 4.6 4.7 Q 3 (N) (P) 3.9 3.4 SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage(2) (IS = 1.7 Adc, VGS = 0 Vdc) (IS = –1.7 Adc, VGS = 0 Vdc) VSD (N) (P) 0.77 0.90 1.2 1.2 Vdc Reverse Recovery Time (N) (ID = 3.5 Adc, trr (N) (P) 54.5 77.4 ns (D , VGS = 0 Vdc dIS/dt = 100 A/µs) ta (N) (P) 14.8 19.9 (P) (ID = 3.5 Adc, tb (N) (P) 39.7 57.5 Reverse Recovery Stored Charge (D , VGS = 0 Vdc dIS/dt = 100 A/µs) Q RR (N) (P) 0.048 0.088 µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature.

4 Motorola TMOS Power MOSFET Transistor Device Data

Figure 4. On–Resistance versus Drain Current Figure 5. On–Resistance Variation with Figure 6. Drain–To–Source Leakage

1.4 VGS = 10 V

by recognizing that the power MOSFET is charge controlled. by current from the generator. and Q2 and VGSP are read from the gate charge curve. on–state when calculating td(off). voltage at the source which reduces the gate drive current. tion of drain current, the mathematical solution is complex. sure and, consequently, is not specified. Figure 7. Capacitance VariationFigure 7. Capacitance Variation

6 Motorola TMOS Power MOSFET Transistor Device Data

Figure 8. Gate–To–Source and Drain–To–Source Figure 9. Resistive Switching Time Variation

switching losses, radiated noise, EMI and RFI. teristic and is usually the culprit that induces current ringing. Figure 10. Diode Forward Voltage versus CurrentFigure 10. Diode Forward Voltage versus Current

8 Motorola TMOS Power MOSFET Transistor Device Data

Figure 11. Reverse Recovery Time (trr) Figure 12. Maximum Rated Forward Biased

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10 Motorola TMOS Power MOSFET Transistor Device Data

INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process. mm inches 0.060 1.52 0.275 7.0 0.024 0.6 0.050 1.270 0.155 4.0 SO–8 POWER DISSIPATION The power dissipation of the SO–8 is a function of the input pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SO–8 package, PD can be calculated as follows: PD = TJ(max) – TA R θJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 2.0 Watts. PD = 150°C – 25°C 62.5°C/W = 2.0 Watts The 62.5°C/W for the SO–8 package assumes the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 2.0 Watts using the footprint shown. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using board material such as Thermal Clad, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.

  • Always preheat the device.
  • The delta temperature between the preheat and soldering should be 100°C or less.*
  • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
  • The soldering temperature and time shall not exceed 260°C for more than 10 seconds.
  • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
  • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
  • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

vary among soldering systems, but it is a good starting point. efficiently, then distributes this energy to the components. up to 30 degrees cooler than the adjacent solder joints.

40 TO 80 SECONDS

Figure 16. Typical Solder Heating Profile

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12 Motorola TMOS Power MOSFET Transistor Device Data

STYLE 14: PIN 1. N-SOURCE 2. N-GATE 3. P-SOURCE 4. P-GATE 5. P-DRAIN 6. P-DRAIN 7. N-DRAIN 8. N-DRAIN CASE 751–05 SO–8 ISSUE P SEATING PLANE C K 4X P A0.25 (0.010)M TB SS 0.25 (0.010)M B M 8X D R M J X 45 /C0095 /C0095 F –A– –B– –T– DIM MIN MAX MILLIMETERS A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.35 0.49 F 0.40 1.25 G 1.27 BSC J 0.18 0.25 K 0.10 0.25 M 0 7 P 5.80 6.20 R 0.25 0.50 /C0095/C0095 G NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET : http://motorola.com/sps MMDF4C03HD/D◊