MMDF3200Z MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0080/C0114/C0111/C0100/C0117/C0099/C0116 /C0080/C0114/C0101/C0118/C0105/C0101/C0119 Medium Power Surface Mount Products /C0084/C0077/C0079/C0083 /C0068/C0117/C0097/C0108 /C0078/C0045/C0067/C0104/C0097/C0110/C0110/C0101/C0108 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114/C0115 WaveFET  devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

  • Zener Protected Gates Provide Electrostatic Discharge Protection
  • Designed to withstand 200 V Machine Model and 2000 V Human Body Model
  • Low RDS(on) Provides Higher Efficiency and Extends Battery Life
  • Logic Level Gate Drive — Can Be Driven by Logic ICs
  • Miniature SO–8 Surface Mount Package — Saves Board Space
  • Diode Is Characterized for Use In Bridge Circuits
  • Diode Exhibits High Speed, With Soft Recovery
  • IDSS Specified at Elevated Temperature
  • Mounting Information for SO–8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Max Unit Drain–to–Source Voltage VDSS 20 V Drain–to–Gate Voltage (RGS = 1.0 MΩ ) VDGR 20 V Gate–to–Source Voltage — Continuous VGS ± 12 V Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C DEVICE MARKING ORDERING INFORMATION D3200 Device Reel Size Tape Width Quantity D3200 MMDF3200Z 13″ 12 mm embossed tape 4000 units This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MMDF3200Z/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA  Motorola, Inc. 1997 N1–Source TOP VIEW N1–Gate N2–Source N2–Gate N1–Drain N1–Drain N2–Drain N2–Drain CASE 751–06, Style 11 SO–8 /C0077/C0077/C0068/C0070/C0051/C0050/C0048/C0048/C0090 DUAL TMOS POWER MOSFET

11.5 AMPERES

20 VOLTS

R DS(on) = 0.015 OHM Motorola Preferred Device N1–SOURCE N1–GATE

8 N1–DRAIN7

N2–SOURCE N2–GATE

6 N2–DRAIN5

/C0077/C0077/C0068/C0070/C0051/C0050/C0048/C0048/C0090

2 Motorola TMOS Power MOSFET Transistor Device Data

MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ 10 Seconds) Parameter Symbol Maximum Unit Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (1) ID ID IDM 11.5 9.2 57.5 A A A Total Power Dissipation @ TA = 25°C Linear Derating Factor PD 2.0 Watts mW/ °C Thermal Resistance — Junction to Ambient R θJA 62.5 °C/W Continuous Source Current (Diode Current) IS TBD A When mounted on 1 inch square (25.40 mm square) FR–4 or G–10 board (VGS = 10 V @ Steady State) Parameter Symbol Maximum Unit Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (1) ID ID IDM 8.0 5.9 A A A Total Power Dissipation @ TA = 25°C Linear Derating Factor PD 1.28 10.2 Watts mW/ °C Thermal Resistance — Junction to Ambient R θJA 98 °C/W Continuous Source Current (Diode Current) IS TBD A When mounted on minimum FR–4 or G–10 board (VGS = 10 V @ Steady State) Parameter Symbol Maximum Unit Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (1) ID ID IDM 7.1 5.2 35.5 A A A Total Power Dissipation @ TA = 25°C Linear Derating Factor PD 0.75 6.0 Watts mW/ °C Thermal Resistance — Junction to Ambient R θJA 166 °C/W Continuous Source Current (Diode Current) IS TBD A (1) Repetitive rating; pulse width limited by maximum junction temperature.

/C0077/C0077/C0068/C0070/C0051/C0050/C0048/C0048/C0090 3Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS TBD Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 1.0 µAdc Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc) IGSS — TBD 1.0 /C0109A ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS , ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 0.5 0.8 TBD 1.2 Vdc mV/°C Static Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 11.5 Adc) (VGS = 2.5 Vdc, ID = 5.9 Adc) R DS(on) TBD TBD m Ω Forward Transconductance (VDS = 8.0 Vdc, ID = 3.0 Adc) gFS 5.0 TBD — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 15 Vdc V 0 Vdc C iss — TBD TBD pF Output Capacitance (VDS = 15 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — TBD TBD Transfer Capacitance f = 1.0 MHz) C rss — TBD TBD SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (V 16 Vd I 11 5 Ad td(on) — TBD TBD ns Rise Time (VDD = 16 Vdc, ID = 11.5 Adc, VGS =45V d c tr — TBD TBD Turn–Off Delay Time VGS = 4.5 Vdc, R G = 10 Ω ) td(off) — TBD TBD Fall Time G ) tf — TBD TBD Gate Charge See Figure 8 (V 16 Vd I 11 5 Ad Q T — TBD TBD nC See Figure 8 (VDS = 16 Vdc, ID = 11.5 Adc, Q 1 — TBD —( DS , D , VGS = 4.5 Vdc) Q 2 — TBD — Q 3 — TBD — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 11.5 Adc, VGS = 0 Vdc) (IS = 11.5 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — TBD TBD 1.2 Vdc Reverse Recovery Time (I 11 5 Ad V 0 Vd trr — TBD — ns (IS = 11.5 Adc, VGS = 0 Vdc, ta — TBD —(S , GS , dIS/dt = 100 A/µs) tb — TBD — Reverse Recovery Stored Charge Q RR — TBD — µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature.

/C0077/C0077/C0068/C0070/C0051/C0050/C0048/C0048/C0090

4 Motorola TMOS Power MOSFET Transistor Device Data

CASE 751–06 ISSUE T STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 SEATING PLANE A0.25 M CB SS

0.25 M B M

h /C0113 C X 45/C0095 L DIM MIN MAX MILLIMETERS A 1.35 1.75 A1 0.10 0.25 B 0.35 0.49 C 0.19 0.25 D 4.80 5.00 E

1.27 BSCe

3.80 4.00 H 5.80 6.20 h 0 7 L 0.40 1.25 /C0113 0.25 0.50 /C0095/C0095 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. D E H A B e BA1 C A 0.10 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Customer Focus Center: 1–800–521–6274 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE : http://motorola.com/sps/ MMDF3200Z/D◊