MMDF1300 ONSEMI | Alldatasheet

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 Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 1

1 Publication Order Number:

3 Amps, 25 Volts

Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

  • Low R DS(on) Provides Higher Efficiency and Extends Battery Life
  • Logic Level Gate Drive – Can be Driven by Logic ICs
  • Miniature SO–8 Surface Mount Package – Saves Board Space
  • Diode Exhibits High Speed, with Soft Recovery MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 25 Vdc Gate–to–Source Voltage VGS ± 20 Vdc Drain Current – Continuous N–Channel P–Channel ID 3.0 2.0 Adc Drain Current – Pulsed N–Channel P–Channel IDM 9.0 6.0 Apk Operating and Storage Temperature RangeTJ, Tstg –65 to +150 Total Power Dissipation @ TA = 25°C PD 1.8 Watts Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 20 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 25 mH, RG = 25 ) EAS 113 mJ Thermal Resistance – Junction–to–Ambient (Note 1.) R θJA 66.3 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 sec. TL 260 °C 1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. Source–1 1 Top View Gate–1 Source–2 Gate–2 Drain–1 Drain–1 Drain–2 Drain–2 Device Package Shipping

ORDERING INFORMATION

MMDF1300R2 SO–8 2500 Tape & Reel

3 AMPERES

25 VOLTS

R DS(on) = 100 m (N–Channel) R DS(on) = 210 m (P–Channel) http://onsemi.com D S G P–Channel D S G N–Channel SO–8, Dual CASE 751 STYLE 11 LYWW MARKING DIAGRAM 1300 1300 = Device Code L = Location Code Y = Year WW = Work Week PIN ASSIGNMENT

http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Polarity Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) V(BR)DSS – 30 – – Vdc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) IDSS (N) (P) 1.0 1.0 µAdc Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS – – – ±100 nAdc ON CHARACTERISTICS (Notes 2. & 3.) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) VGS(th) (N) (P) 1.0 1.0 1.5 2.0 2.0 3.0 Vdc Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 2.0 Adc) R DS(on) (N) (P) 0.09 0.16 0.10 0.21 Ohms Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 1.0 Adc) R DS(on) (N) (P) 0.13 0.30 0.16 0.375 Ohms Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc) gFS (N) (P) 1.0 1.0 mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 16 Vd C iss (N) (P) 215 200 301 300 pF Output Capacitance (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss (N) (P) 111 100 158 160 Transfer Capacitance f = 1.0 MHz) C rss (N) (P) SWITCHING CHARACTERISTICS (Note 4.) Turn–On Delay Time td(on) (N) (P) ns Rise Time (VDD = 10 Vdc, ID = 2.0 Adc, tr (N) (P) 196 180 Turn–Off Delay Time ID = 2.0 Adc, VGS = 4.5 Vdc, R G = 6.0 Ω ) td(off) (N) (P) Fall Time tf (N) (P) Total Gate Charge Q T (N) (P) 3.3 7.0 5.0 nC (VDS = 16 Vdc, ID =20A d c Q 1 (N) (P) 1.2 1.2 ID = 2.0 Adc, VGS = 4.5 Vdc) Q 2 (N) (P) 2.0 2.5 Q 3 (N) (P) 1.9 3.5 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Negative signs for P–Channel device omitted for clarity. 4. Switching characteristics are independent of operating junction temperature.

http://onsemi.com ELECTRICAL CHARACTERISTICS – continued (TA = 25°C unless otherwise noted) Characteristic Symbol Polarity Min Typ Max Unit SOURCE–DRAIN DIODE CHARACTERISTICS (Note 5.) Forward On–Voltage (Note 6.) (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc) VSD (N) (P) 1.0 1.3 1.4 1.7 Vdc Reverse Recovery Time trr (N) (P) ns (N) (ID = 2.0 Adc, ta (N) (P) (ID = 2.0 Adc, VGS = 0 Vdc dIS/dt = 100 A/µs) tb (N) (P) 5.0 7.0 Reverse Recovery Stored Charge Q RR (N) (P) 0.02 0.02 µC 5. Negative signs for P–Channel device omitted for clarity. 6. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

http://onsemi.com PACKAGE DIMENSIONS STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 SEATING PLANE N J X 45 K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. A B S DH C 0.10 (0.004) DIM A MIN MAX MIN MAX INCHES 4.80 5.00 0.189 0.197 MILLIMETERS B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010 J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8 N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 –X– –Y– G MYM0.25 (0.010) –Z– YM0.25 (0.010) Z S X S M SO–8 CASE 751–07 ISSUE V ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–spanish@hibbertco.com Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone : 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–asia@hibbertco.com JAPAN : ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone : 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MMDF1300/D MiniMOS is a trademark of Semiconductor Components Industries, LLC (SCILLC). NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone : (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–german@hibbertco.com French Phone : (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–french@hibbertco.com English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland