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VDS @ Tj, max 700 V RDS(on), max 0.90 Ω VGS(th), typ 3 V ID 4.7 A Qg, typ 11.1 nC Order Code Marking Temp. Range Package Packing RoHS Status MMD65R900QRH 65R900Q -55 ~ 150oC TO-252(DPAK) Reel compliant MMD65R900Q 650V 0.90Ω N-channel MOSFET  Description MMD65R900Q is power MOSFET using M agnaChip’s advanced super junction technology that can realize very low on- resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of l ow EMI to designers as well as low switching loss.  Features  Low power loss by high speed switching and low on-resistance  100% avalanche tested  Green package – Pb-free plating, Halogen-free  Key Parameters  Ordering Information  Applications  PFC power supply stages  Switching applications  Adapter D G S G D S  Package & Internal Circuit Apr. 2017 Revision 1.0 MagnaChip Semiconductor Ltd. 1

Parameter Symbol Rating Unit Note Drain – source voltage VDSS 650 V Gate – source voltage VGSS ±30 V Continuous drain current ID

4.7 A TC = 25oC

3.0 A TC = 100oC

Pulsed drain current(1) IDM 14.1 A Power dissipation PD 34.7 W Single - pulse avalanche energy EAS 50 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness(2) dv/dt 15 V/ns Storage temperature Tstg -55 ~150 oC Maximum operating junction temperature Tj 150 oC 1) Pulse width tP limited by Tj,max . 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS . Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 3.4 oC/W Thermal resistance, junction-ambient max(3) Rthja 62 oC/W 3) Device mounted on minimal footprint of PCB.  Thermal Characteristics  Absolute Maximum Rating (Tc=25oC unless otherwise specified) Apr. 2017 Revision 1.0 MagnaChip Semiconductor Ltd. 2

Parameter Symbol Min. Typ. Max. Unit Test Condition Drain – source breakdown voltage V(BR)DSS 650 - - V VGS = 0V, ID = 250uA Gate threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250uA Zero gate voltage drain current IDSS - - 1 uA VDS = 650V, VGS = 0V Gate leakage current IGSS - - 100 nA VGS = ±30V, VDS = 0V Drain-source on state resistance RDS(ON) - 0.8 0.9 Ω VGS = 10V, ID = 1.5A Parameter Symbol Min. Typ. Max. Unit Test Condition Input capacitance Ciss - 384 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Output capacitance Coss - 439 - Reverse transfer capacitance Crss - 19.5 - Effective output capacitance energy related(4) Co(er) - 14.5 - VDS = 0V to 520V, VGS = 0V, f = 1.0MHz Turn on delay time td(on) - 13.5 - ns VGS = 10V, RG = 25Ω, VDS = 325V, ID = 4.7A Rise time tr - 24 - Turn off delay time td(off) - 56 - Fall time tf - 23.5 - Total gate charge Qg - 11.1 - nC VGS = 10V, VDS = 520V, ID = 4.7A Gate – source charge Qgs - 4.5 - Gate – drain charge Qgd - 2.6 - Gate resistance RG - 20 - Ω VGS = 0V, f = 1.0MHz 4) Co(er) is a capacitance that gives the same stored energy as Coss while VDS is rising from 0V to 80% V(BR)DSS  Static Characteristics (Tc=25oC unless otherwise specified)  Dynamic Characteristics (Tc=25oC unless otherwise specified) Apr. 2017 Revision 1.0 MagnaChip Semiconductor Ltd. 3

Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous diode forward current IS - - 4.7 A Diode forward voltage VSD - - 1.4 V IS = 4.7A, VGS = 0V Reverse recovery time trr - 263 - ns IS = 4.7A di/dt = 100A/us VDD = 100V Reverse recovery charge Qrr - 1.9 - uC Reverse recovery current Irrm - 14.4 - A  Reverse Diode Characteristics (Tc=25oC unless otherwise specified) Apr. 2017 Revision 1.0 MagnaChip Semiconductor Ltd. 4

 Characteristic Graph Apr. 2017 Revision 1.0 MagnaChip Semiconductor Ltd. 5

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 Test Circuit Apr. 2017 Revision 1.0 MagnaChip Semiconductor Ltd. 8

 Physical Dimension TO-252(D- PAK) [ Unit:mm] Apr. 2017 Revision 1.0 MagnaChip Semiconductor Ltd. 9

DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Apr. 2017 Revision 1.0 MagnaChip Semiconductor Ltd. 10