MMD60R400RFZ MGCHIP | Alldatasheet
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Dec. 2022 Revision 1.0 Magnachip Semiconductor Ltd. 1 Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.40 Ω VTH,typ 4.0 V ID 11.0 A Qg,typ 18.4 nC Order Code Marking Temp. Range Package Packing RoHS Status MMD60R400RFZRH 60R400RFZ -55 ~ 150oC TO-252 Reel Compliant MMD60R400RFZ 600V 0.40Ω N-channel MOSFET Description MMD60R400RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Applications Soft-switching Applications Motor drive Adapters Lighting Package & Internal Circuit Features Ultra-fast Body Diode Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free Zener - Integrated Ordering Information D G S
Dec. 2022 Revision 1.0 Magnachip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain - Source voltage VDSS 600 V Gate - Source voltage VGSS ±25 V Continuous drain current (1) ID
11.0 A TC=25 oC
7.0 A TC=100 oC
Pulsed drain current (2) IDM 33.0 A Power dissipation PD 69.4 W Single - pulse avalanche energy (3) EAS 220 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness (4) dv/dt 50 V/ns Storage temperature Tstg -55 ~150 oC Maximum operating junction temperature Tj 150 oC 1) Id limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) IAS : 1.5A 4) ISD ≤ ID, di/dt = 1000A/μs, VDS peak ≤ V(BR)DSS, VDD= 400V, Tj=25oC Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 1.80 oC/W Thermal resistance, junction-ambient max Rthja 40.7 oC/W Thermal Characteristics Absolute Maximum Rating (Tc=25oC unless otherwise specified)
Dec. 2022 Revision 1.0 Magnachip Semiconductor Ltd. 3 Parameter Symbol Min. Typ. Max. Unit Test Condition Drain - Source Breakdown voltage V(BR)DSS 600 - - V VGS = 0V, ID = 1mA Gate Threshold Voltage VGS(th) 3.0 4.0 5.0 V VDS = VGS, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 10 μA VDS = 600V, VGS = 0V Gate Leakage Current IGSS - - 10 μA VGS = ±25V, VDS =0V Drain - Source On State Resistance RDS(ON) - 0.36 0.403 Ω VGS = 10V, ID = 3.8A Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Ciss - 670 - pF VDS = 400V, VGS = 0V, f = 400kHz Output Capacitance Coss - 20 - Reverse Transfer Capacitance Crss - 3 - Effective Output Capacitance Energy Related (5) Co(er) - 32.1 - VDS = 0V to 480V, VGS = 0V, f = 400kHz Turn On Delay Time td(on) - 18.0 - ns VGS = 10V, RG = 25Ω, VDS = 300V, ID = 11A Rise Time tr - 45.6 - Turn Off Delay Time td(off) - 51.0 - Fall Time tf - 12.7 - Total Gate Charge Qg - 18.4 - nC VGS = 10V, VDS = 480V, ID = 11A Gate - Source Charge Qgs - 6.6 - Gate - Drain Charge Qgd - 7.4 - Gate Resistance RG - 9.0 - Ω VGS = 0V, f = 1MHz 5) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS Static Characteristics (Tc=25oC unless otherwise specified) Dynamic Characteristics (Tc=25oC unless otherwise specified)
Dec. 2022 Revision 1.0 Magnachip Semiconductor Ltd. 4 Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current ISD - - 11.0 A Diode Forward Voltage VSD - - 1.4 V ISD = 11A, VGS = 0V Reverse Recovery Time trr - 195 - ns ISD = 11A di/dt = 100A/μs VDD = 100V Reverse Recovery Charge Qrr - 1.07 - μC Reverse Recovery Current Irrm - 11.0 - A Reverse Diode Characteristics (Tc=25oC unless otherwise specified)
Dec. 2022 Revision 1.0 Magnachip Semiconductor Ltd. 5 Characteristic Graph
Dec. 2022 Revision 1.0 Magnachip Semiconductor Ltd. 6
Dec. 2022 Revision 1.0 Magnachip Semiconductor Ltd. 7
Dec. 2022 Revision 1.0 Magnachip Semiconductor Ltd. 8 Test Circuit
Dec. 2022 Revision 1.0 Magnachip Semiconductor Ltd. 9 Physical Dimension TO-252 (2L) Note : Package body size, length and width do not include mold flash, protrusions and gate burrs
Dec. 2022 Revision 1.0 Magnachip Semiconductor Ltd. 10 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magna chip does not consider respon sibility for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip Semiconductor Ltd.