MMD60R360Q

MMD60R360Q MGCHIP | Alldatasheet

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Mar. 2016 Revision 1.0 MagnaChip Semiconductor Ltd. 1 Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.36 Ω VTH,typ 3 V ID 11 A Qg,typ 19 nC Order Code Marking Temp. Range Package Packing RoHS Status MMD60R360QRH 60R360Q -55 ~ 150℃ TO-252 Reel Halogen Free MMD60R360Q 600V 0.36Ω N-channel MOSFET  Description MMD60R360Q is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Key Parameters  Ordering Information  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters D G S G D S  Package & Internal Circuit

Mar. 2016 Revision 1.0 MagnaChip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 600 V Gate – Source voltage VGSS ±30 V Continuous drain current ID

11 A TC = 25℃

7 A TC = 100℃

Pulsed drain current(1) IDM 33 A Power dissipation PD 76 W Single - pulse avalanche energy EAS 210 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness(2) dv/dt 15 V/ns Storage temperature Tstg -55 ~150 ℃ Maximum operating junction temperature Tj 150 ℃ 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 1.65 ℃/W Thermal resistance, junction-ambient max Rthja 62.5 ℃/W  Thermal Characteristics  Absolute Maximum Rating (Tc=25℃ unless otherwise specified)

Mar. 2016 Revision 1.0 MagnaChip Semiconductor Ltd. 3 Parameter Symbol Min. Typ. Max. Unit Test Condition Drain – Source Breakdown voltage V(BR)DSS 600 - - V VGS = 0V, ID = 250μA Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 600V, VGS = 0V Gate Leakage Current IGSS - - 100 nA VGS = ±30V, VDS = 0V Drain-Source On State Resistance RDS(ON) - 0.32 0.36 Ω VGS = 10V, ID = 3.8A Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Ciss - 742 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 715 - Reverse Transfer Capacitance Crss - 34 - Effective Output Capacitance Energy Related (3) Co(er) - 24 - VDS = 0V to 480V, VGS = 0V, f = 1.0MHz Turn On Delay Time td(on) - 18 - ns VGS = 10V, RG = 25Ω, VDS = 300V, ID = 11A Rise Time tr - 41 - Turn Off Delay Time td(off) - 110 - Fall Time tf - 39 - Total Gate Charge Qg - 19 - nC VGS = 10V, VDS = 480V, ID = 11A Gate – Source Charge Qgs - 5 - Gate – Drain Charge Qgd - 7 - Gate Resistance RG - 21 - Ω VGS = 0V, f = 1.0MHz 3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS  Static Characteristics (Tc=25℃ unless otherwise specified)  Dynamic Characteristics (Tc=25℃ unless otherwise specified)

Mar. 2016 Revision 1.0 MagnaChip Semiconductor Ltd. 4 Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current ISD - - 11 A Diode Forward Voltage VSD - - 1.4 V ISD = 11A, VGS = 0V Reverse Recovery Time trr - 218 - ns ISD = 11A di/dt = 100A/μs VDD = 100V Reverse Recovery Charge Qrr - 2 - μC Reverse Recovery Current Irrm - 20 - A  Reverse Diode Characteristics (Tc=25℃ unless otherwise specified)

Mar. 2016 Revision 1.0 MagnaChip Semiconductor Ltd. 5  Characteristic Graph

Mar. 2016 Revision 1.0 MagnaChip Semiconductor Ltd. 6

Mar. 2016 Revision 1.0 MagnaChip Semiconductor Ltd. 7

Mar. 2016 Revision 1.0 MagnaChip Semiconductor Ltd. 8  Test Circuit

Mar. 2016 Revision 1.0 MagnaChip Semiconductor Ltd. 9  Physical Dimension TO-252(D- PAK) , 3L [Unit:mm]

Mar. 2016 Revision 1.0 MagnaChip Semiconductor Ltd. 10 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsi bility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.