MMD25R210RZ

MMD25R210RZ MGCHIP | Alldatasheet

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Aug. 2024 Revision 1.3 Magnachip Semiconductor Ltd. Parameter Value Unit VDS @ Tj,max 300 V RDS(on),max 0.21 Ω VTH,typ 3 V ID 13.8 A Qg,typ 17 nC Order Code Marking Temp. Range Package Packing RoHS Status MMD25R210RZRH 25R210RZ -55 ~ 150oC TO-252 Reel Compliant  Applications  Switching applications  DC-DC converters  Motor control MMD25R210RZ 250V 0.21Ω N-channel MOSFET  Description MMD25R210RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI and low switching loss as well as excellent ESD capability to designers.  Features  Low power loss by high speed switching and low on-resistance  100% avalanche tested  Green package – Pb free plating, halogen free  Zener - integrated  Key Parameters  Ordering Information  Package & Internal Circuit D G S

Aug. 2024 Revision 1.3 Magnachip Semiconductor Ltd. Parameter Symbol Rating Unit Note Drain - source voltage VDSS 250 V Gate - source voltage VGSS ±25 V Continuous drain current (1) ID

13.8 A TC=25℃

8.7 A TC=100℃

Pulsed drain current (2) IDM 41.4 A Power dissipation PD 100 W Single - pulse avalanche energy (3) EAS 350 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness (4) ISD 15 V/ns Storage temperature dv/dt -55 ~150 oC Maximum operating junction temperature Tstg 150 oC 1) ID limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) L=18mH, IAS = 6.5A, RG = 25Ω 4) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max RthJC 1.25 oC/W Thermal resistance, junction-ambient max RthJA 40.6 oC/W  Thermal Characteristics  Absolute Maximum Rating (Tc=25oC unless otherwise specified)

Aug. 2024 Revision 1.3 Magnachip Semiconductor Ltd. Parameter Symbol Min. Typ. Max. Unit Test Condition Drain - source breakdown voltage V(BR)DSS 250 - - V VGS = 0V, ID = 1mA Gate threshold voltage VGS(th) 2.0 3.0 4.0 V VDS = VGS, ID = 250μA Zero gate voltage drain current IDSS - - 1.0 μA VDS = 250V, VGS = 0V Gate leakage current IGSS - - 10 μA VGS = ±25V, VDS =0V Drain - source on-state resistance RDS(ON) - 0.18 0.21 Ω VGS = 10V, ID = 6.5A Parameter Symbol Min. Typ. Max. Unit Test Condition Input capacitance Ciss - 627 - pF VDS = 100V, VGS = 0V, f = 400kHz Output capacitance Coss - 52 - Reverse transfer capacitance Crss - 8.3 - Effective output capacitance energy related (5) Co(er) - 58 - VDS = 0V to 200V, VGS = 0V, f = 400kHz Turn-on delay time td(on) - 13 - ns VGS = 10V, RG = 25Ω, VDS = 125V, ID = 13.8A Rise time tr - 27 - Turn-off delay time td(off) - 52 - Fall time tf - 18 - Total gate charge Qg - 17 - nC VGS = 10V, VDS = 200V, ID = 13.8A Gate - source charge Qgs - 3.5 - Gate - drain charge Qgd - 8.1 - Gate resistance RG - 13.1 - Ω VGS = 0V, f = 1MHz 5) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS  Static Characteristics (Tc=25oC unless otherwise specified)  Dynamic Characteristics (Tc=25oC unless otherwise specified)

Aug. 2024 Revision 1.3 Magnachip Semiconductor Ltd. Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous diode forward current ISD - - 13.8 A Diode forward voltage VSD - - 1.4 V ISD = 13.8A, VGS = 0V Reverse recovery time trr - 145 - ns ISD = 13.8A di/dt = 100A/μs VDD = 100V Reverse recovery charge Qrr - 0.7 - μC Reverse recovery current Irrm - 10.0 - A  Reverse Diode Characteristics (Tc=25oC unless otherwise specified)

Aug. 2024 Revision 1.3 Magnachip Semiconductor Ltd.  Characteristic Graph Fig.5 Transfer characteristics Fig.6 Diode forward characteristics Fig.1 On-region characteristics. Fig.2 On-resistance variation with drain current Fig.3 On-resistance variation with junction temperature (normalized) Fig.4 Breakdown voltage variation with temperature (normalized) 0 5 10 15 20 ID (A) VDS (V) 6 V 0.5 1.5 2.5 -60 -30 0 30 60 90 120 150 RDS(ON) (normalized) TJ (˚C) 2 4 6 8 10 ID (A) VGS (V) T=150˚C -55˚C 25˚C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 0 5 10 15 20 25 30 RDS(ON) (Ω) ID (A) VGS=20V VGS=10V 0.7 0.8 0.9 1.1 1.2 1.3 -60 -30 0 30 60 90 120 150 BVDSS (normalized) TJ (˚C) 100 IS (A) VSD (V) 25˚C T=150˚C 8 V

10 V 20 V

Notes : VGS=10V, ID=13.8A Notes : VGS=0V, ID=1mA VGS = 5 V

Aug. 2024 Revision 1.3 Magnachip Semiconductor Ltd. Fig.9 Threshold voltage variation with junction temperature Fig.10 Drain current Fig.11 Power dissipation variation with pulse time Fig.12 Output capacitance stored energy Fig.7 Gate charge characteristics Fig.8 Capacitance characteristics 5000 10000 15000 20000 25000 10 10 10 10 10 10 PD (W) tP (s) 0.5 1.5 0 50 100 150 200 250 EOSS (µJ) VDS (V) 0.5 1.5 VGS(th) (normalized) TJ (˚C) 0 4 8 12 16 VGS (V) QG (nC) 100 1000 10000 0.1 1 10 100 C (pF) VDS (V) 0.0 4.0 8.0 12.0 16.0 25 50 75 100 125 150 ID (A) TC (˚C) 50V 200V Ciss Coss Crss Notes : ID=13.8A Notes : VGS=0V, f=400kHz * Single Pulse Rthj c = 1.25℃/W TC=25℃ -5 -4 -3 -2 -1 0

Aug. 2024 Revision 1.3 Magnachip Semiconductor Ltd. Fig.13 Transient thermal response Fig.14 Safe operating area 10 10 10 10 10 10 10 10 10 Zthjc (˚C/W) tP (s) 10 10 10 10 10 ID (A) VDS (V) Single Pulse Tj=Max rated TC=25℃ Operation in This Area is Limited by RDS(on) 1ms -1 0 1 2 32-6 -5 -4 -3 -2 -1 0 1 * Notes: Duty Factor, D=t1/t2 PEAK Tj-TC=PDM* Z thjc Rthjc = 1.25℃/W Single Pulse 0.02 0.01 0.1 D=0.5 0.2 0.05 100µs 10ms 100ms PDM DC

Aug. 2024 Revision 1.3 Magnachip Semiconductor Ltd.  Test Circuit

Aug. 2024 Revision 1.3 Magnachip Semiconductor Ltd.  Physical dimension TO-252 (2L) Note : Package body size, length and width do not include mold flash, protrusions and gate burrs

Aug. 2024 Revision 1.3 Magnachip Semiconductor Ltd. DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Magna chip product. is a registered trademark of Magna chip Semiconductor Ltd.