MMBZ6V8DC VISHAY | Alldatasheet
Document overview
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Technical content
Features
- Dual Silicon Planar Zener Diodes with Common Cathode or Common Anode configurations.
- Dual package provides for Bidirectional or separate unidirectional configurations.
- The dual configurations protect two separate lines with only one device.
- Peak Power: 40 watts @1ms (Bidirectional) .
- High temperature Soldering Guaranteed: 230˚C for 10 seconds.
- Ideal for ESD Protection.
- For bidirectional operation, circuit connected to pins 1 and 2. For unidirectional operation, circuit connected to pins 1 and 3 or pins 2 and 3. TO-236AB (SOT-23) Mechanical Data Case: SOT -23 Plastic Package Weight:approx. 0.008g Terminals:Solderable per MIL-STD-750, method 2026 Packaging Codes/Options: E8/10K per 13” reel (8mm tape) E9/3K per 7” reel (8mm tape) Dimensions in inches and (millimeters) Mounting Pad Layout Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Power Dissipation(1)@ T A≤ 25˚C P pk 40(4) W Total Power Dissipation at T A = 25°C PD 225 mW on FR-5 Board(2) Derate above 25˚C 1.8 mW/˚C Total Power Dissipation at T A = 25°C PD 300 mW on Alumina Substrate(3) Derate above 25˚C 2.4 mW/˚C Thermal Resistance Junction to Ambient Air R Θ JA 556 °C/W Operating and Storage Temperature Range T J, Tstg –55 to +150 °C Notes: (1) Nonrepetitive current pulse per Figure 2 and derate above TA = 25°C per Figure 3. (2) FR-5 = 1.0 x 0.75 x 0.62 in. (4) The MMBZ6V8DC/A is rated at 24V Marking: MMBZ15VDC = TC5 MMBZ27VDC = TC7 MMBZ6V8DC = ? MMBZ15VDA = TA5 MMBZ27VDA = TA7 MMBZ6V8DA = ? MMBZ15VDA MMBZ27VDA MMBZ15VDC MMBZ27VDC Common AnodeCommon Cathode Top View
MMBZ6V8DC/A thru MMBZ27VDC/A Vishay Semiconductors formerly General Semiconductor www.vishay.com Document Number 88358 2 21-May-02 Electrical Characteristics(TJ = 25°C unless otherwise noted) Type Breakdown Voltage VBR (Volts)(1) Min Nom Max @I T mA Working Peak Reverse Voltage VRWM (Volts) Max Reverse Leakage Current IR (nA) Max Reverse Surge Current IPP (Amps) Max Reverse Voltage @ IRSM (2) (Clamping Voltage) VC (Volts) Max Temperature Coefficient of VBR (mV/°C) Max Forward Voltage VF (Volts) @I F (mA) Notes: (1) VBR measured at pulse test current IT at an ambient temperature of 25°C (2) Surge current waveform per Figure 2 and derate per Figure 3 0 25 50 75 100 125 150 175 200 100 0 25 50 75 100 125 150 175 300 100 150 200 250 100 0 0 1 2 3 4 FIG. 1 - STEADY STATE POWER DERATING CURVE PULSE WIDTH (tp) is DEFINED as that POINT WHERE the PEAK CURRENT DECAYS to 50% of I RSM tr≤10µs tr HALF VALUE – IRSM PEAK VALUE – IRSM tp FIG. 2 - PULSE WAVEFORM FIG. 3 - PULSE DERATING CURVE PD , POWER DISSIPATION (mW) VALUE(%) t, TIME (ms) TA, AMBIENT TEMPERATURE ( °C) PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ T A=25Z(°C) ALUMINA SUBSTRATE FR-5 BOARD T, Temperature (°C) 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) Layout for RΘ JA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in. (0.3mm) Dimensions in inches (millimeters) Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)