MMBZ5V1AL-HF COMCHIP | Alldatasheet

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REV:A Page 1QW-JP188 MMBZ5V1AL-HF Thru. MMBZ33VAL-HF - Working peak reverse voltage 2V to 26V. - Standard zener breakdown voltage 5.1V to 33V. - ESD Rating: Class 3B (>16kV) per the human body model (HBM) Class C (>400V) per the machine model (MM) - ESD Rating of IEC 61000-4-2 level 4. - Low leakage < 5 µA. Operating temperature range Storage temperature range ESD per IEC 61000-4-2 (air) ESD per IEC 61000-4-2 (contact) ESD TJ TSTG ±15 -55 to +150 °C kV Maximum Rating (at Ta=25°C unless otherwise noted) Parameter UnitValueSymbol Peak power dissipation PPP See next table W -55 to +150 °C Total power dissipation PD 200 mW Dimensions in inches and (millimeter) SOT-23 1 2 0.055(1.40) 0.047(1.20) 0.118(3.00) 0.110(2.80) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) Peak pulse current IPP See next table A

Electrical Characteristics (at Ta=25°C unless otherwise noted) SMD ESD Protection Diode MMBZ5V6AL-HF MMBZ6V2AL-HF MMBZ6V8AL-HF MMBZ9V1AL-HF MMBZ5V1AL-HF VRWM (V) IPP (A) Max. VF @IF=10mA Max. clamping voltage 4.5 4.8 5.32 5.89 6.46 8.65 0.9 0.9 0.9 0.9 0.9 8.7 9.6 2.76 2.5 1.7 Part No. Comchip Technology CO., LTD. REV:A Page 2 Unidirectional (circuit tied to Pin 1 and 3 or Pins 2 to 3) (µA)(V) 0.5 0.5 0.3 IT(mA)Min Nom Max 5.1 5.6 6.2 6.8 9.1 5.4 5.88 6.51 7.14 9.56 VC (V) IR Typ. capacitance @VR=0V,1MHz CJ (pF) (W) PPP Breakdown voltage VBR (V) MMBZ15VAL-HF MMBZ18VAL-HF MMBZ20VAL-HF MMBZ27VAL-HF MMBZ12VAL-HF VRWM (V) IPP (A) Max. VF @IF=10mA Max. clamping voltage (Note 1) 8.5 14.5 11.4 14.25 17.10 25.65 0.9 0.9 0.9 0.9 0.9 2.35 1.9 1.6 Part No. Unidirectional (circuit tied to Pin 1 and 3 or Pins 2 to 3) (nA)(V) 200 IT(mA)Min Nom Max 12.6 15.75 18.90 28.35 VC (V) IR Typ. capacitance @VR=0V,1MHz CJ (pF) (W) PPP Breakdown voltage VBR (V) MMBZ33VAL-HF 26 31.35 1 0.9 46 0.87 4050 33 34.65 Notes: 1. Surge current waveform per Fig.5 . 117 QW-JP188

Typical Rating and Characteristic Curves (MMBZxxxAL-HF Series) Comchip Technology CO., LTD. REV:A Page 3 Fig.1 - Typical Breakdown Voltage vs Temperature Temperature, (°C) Breakdown Voltage, VBR @ IT (V) -40 0 15050 100 Fig.3 - Typical Capacitance vs Bias Voltage Bias, (V) Capacitance, C (pF) 200 280 320 1 32 120 160 240 Fig.5 - Steady State Power Derating Curve Power Dissipation, PD (mW) 200 300 350 25 15050 100 125 100 150 250 Fig.2 - Typical Leakage Current vs Temperature IR, (nA) 0.01 1000 0.1 100 25 85 125 Fig.4 - Typical Capacitance vs Bias Voltage Capacitance, C (pF) Fig.6 - Pulse Waveform Time, t (ms) Value, (%) 100 0 1 2 3 4 Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode 5.6V 5.6V 15V 15V Bias, (V) 1 32 33V 27V 33V 27V Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode Temperature, (°C) Alumina substrate FR-5 Board Temperature, (°C) -40 Half value - IPP/2 Peak value - IPP tr≤10µs tp Pulse width (tp) is defined as that point where the peak current decays to 50% of IPP. QW-JP188

Typical Rating and Characteristic Curves (MMBZxxxAL-HF Series) Comchip Technology CO., LTD. REV:A Page 4 Fig.7 - Pulse Derating Curve Peak Pulse Derating in % of Peak Power or Current0 100 110 25 15050 100 12575 Ambient Temperature, Ta (°C) TA = 25°C QW-JP188

Reel Taping Specification A B C d E F P P0 P1 W (mm) (inch) SOT-23 SYMBOL (inch) SOT-23 SYMBOL A (mm) B C d D D1 D2 E F P P0 P1 W W1 − 0.004 0.484 ± 0.039 o D D1D2 Comchip Technology CO., LTD. REV:A Page 5QW-JP188

(pcs) Reel Size (inch) 73,000 REEL PACK Suggested P.C.B. PAD Layout SIZE (inch)(mm) 0.80 0.95 0.031 0.037 SOT-23 2.02 0.080 A B C D 2.82 0.111E A C B D E C Comchip Technology CO., LTD. REV:A Page 6 27A 33A MMBZ27VAL-HF MMBZ33VAL-HF xxx = Product type marking code Solid dot = Control code XXX M M = Control code 0.80 0.031 QW-JP188