MMBZ15VAL/DG

MMBZXVAL NXP | Alldatasheet

Document overview

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Technical content

1.1 General description

overvoltage protection of up to two signal lines. [1] All types available as /DG halogen-free version.

1.2 Features

1.3 Applications

Table 1. Product overview

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved.

1.4 Quick reference data

Table 2. Quick reference data Tamb =2 5°C unless otherwise specified. Table 3. Pinning

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Table 4. Ordering information Table 5. Marking codes

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. [1] In accordance with IEC 61643-321 (10/1000µs current waveform). [2] Measured from pin 1 or 2 to pin 3. [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 or 2 to pin 3. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 7. ESD maximum ratings Tamb =2 5°C unless otherwise specified.

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Measured from pin 1 or 2 to pin 3. Table 8. ESD standards compliance Table 9. Thermal characteristics

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Table 10. Characteristics Tamb =2 5°C unless otherwise specified.

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. [1] In accordance with IEC 61643-321(10/1000µs current waveform). [2] Measured from pin 1 or 2 to pin 3. Table 10. Characteristics …continued Tamb =2 5°C unless otherwise specified.

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 8 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression MMBZ27VAL: unidirectional and bidirectional Tamb =2 5°C Fig 3. Rated peak pulse power as a function of exponential pulse duration (rectangular waveform); typical values Fig 4. Relative variation of rated peak pulse power as a function of junction temperature; typical values f = 1 MHz; Tamb =2 5°C (1) MMBZ15VAL: unidirectional (2) MMBZ15VAL: bidirectional (3) MMBZ27VAL: unidirectional (4) MMBZ27VAL: bidirectional MMBZ27VAL: V RWM =2 2V Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Reverse leakage current as a function of ambient temperature; typical values 006aab320 102 103 PPPM (W) tp (ms) 10−2 10310210−1 101 Tj (°C) 0 200 15050 100 006aab321 0.4 0.8 1.2 P PPM PPPM(25 °C) VR (V) 02 5 2010 155 006aab322 100 C d (pF) (1) (2) (3) (4) 006aab323 10−1 10−2 102 IRM (nA) 10−3 Tamb (°C) −75 175 12525 75−25

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 9 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 8. Application information The MMBZxVAL series is designed for the protection of up to two unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The devices provide a surge capability of 40 W per line for a 10/1000µs waveform. Fig 7. V-I characteristics for a unidirectional ESD protection diode Fig 8. V-I characteristics for a bidirectional ESD protection diode 006aab324 −VCL −VBR −VRWM −IRM −IR −IPP V I P-N − + −IPPM 006aab325 −VCL −VBR −VRWM VCLVBRVRWM−IRM IRM −IR IR −IPP IPP − + IPPM −IPPM Fig 9. Typical application: ESD and transient voltage protection of data lines 006aab326 MMBZxVAL line 1 to be protected unidirectional protection of two lines bidirectional protection of one line line 2 to be protected GND MMBZxVAL line 1 to be protected GND

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 10 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the devices as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 9. Test information

9.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 10. Package outline Fig 10. Package outline SOT23 (TO-236AB) 04-11-04Dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. [1] For further information and the availability of packing methods, seeSection15. Table 11. Packing methods

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 12 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 12. Soldering Fig 11. Reflow soldering footprint SOT23 (TO-236AB) Fig 12. Wave soldering footprint SOT23 (TO-236AB) solder lands solder resist occupied area solder paste sot023_fr 0.5 (3·) 0.6 (3·) 0.6 (3·) 0.7 (3·) 3.3 2.9 1.7 1.9 Dimensions in mm solder lands solder resist occupied area preferred transport direction during soldering sot023_fw 2.8 4.5 1.4 4.6 1.4 (2·) 1.2 (2·) 2.2 2.6 Dimensions in mm

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Table 12. Revision history

MMBZXVAL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 1 September 2008 14 of 15 NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression 14. Legal information

14.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

14.2 Definitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

14.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ESD protection devices —These products are only intended for protection against ElectroStatic Discharge (ESD) pulses and are not intended for any other usage including, without limitation, voltage regulation applications. NXP Semiconductors accepts no liability for use in such applications and therefore such use is at the customer’s own risk.

14.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors MMBZxVAL series Double ESD protection diodes for transient overvoltage suppression © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 September 2008 Document identifier: MMBZXVAL_SER_1 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 16. Contents