MMBZ5V6A SKTECHNOLGY | Alldatasheet

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Technical content

Vg oz: S 4 #4 BP oe MMBZ**** SERIES Dual Common Anode Zener TVS en i SMALL SIGNAL ZENER DIODES Features: 300m WATTS *Allows Either Two Separate Unidirectional Configuations or a Single 3-26 VOLTS Bidirectional Configuations. *Low Leakage Current. *24-40 Watts Peak Power Protection. *Excellent Clamping Capability. 3 3 *ESD Rating of Class N(exceeding 16KV)per the Human Body Model. *Transient Voltage Suppressors Encapsulated in a SOT-23 Package. So 2 ——— 1 Mechanical Data: SOT-23 *Case: Molded Epoxy *Marking: Marking Code *Maximum Case Temperature for Soldering Purpose: 260 C for 10 sec. *Weight: 0.008grams(approx.) SOT-23 Outline Dimensions Unit:mm ajo [| Dim | Min | Max] [i] |B | 1.19 | 1.40 | Tor! view | |B lc ry | 3 ei, ely ime M L_M_|0.076 REV.08 1 of 4

Vg ox x: DS cues MMBZ**** SERIES Maximum Ratings (Ta =25 C Unless otherwise Noted) Peak Power Dissipation @ 1.0ms @T, < 25") w MMBZ5V6A thru MMBZ10VA 24 MMBZ12VA thru MMBZ33VA 40 Total Power Dissipation on FR-5 Board ?)@Ta=25'C Pp 225 mw Derate above 25°C 18 mw/C Thermal Resistance Junction-to-Ambient ROA 556 “CW Total Power Dissipation on Alumina Substrate @ Ta =25'C Pp 300 mw Derate above 25°C 24 mw/C Thermal Resistance Junction-to-Ambient ROA 417 “CW Junction and Storage Temperature Range Ty Aste -55to +150 Lead Solder Temperature-Maximum(10 Second Duration) TL 260 NOTE: 1. Non-Repetitive Current Pulse, per FIG 5 and Derated above Ta=25 C per FIG6.

Electrical Characteristics

(Ta=25 C unless otherwise noted) i UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) — | lee | Maximum Reverse Peak Pulse Current Clamping Voltage @ Ipp ewan Vewu | — v Working Peak Reverse Votlage if Re } ok | Maximum Reverse Leakage Current @ Vawm| | Breakdown Voltage @ |; | eT Maximum Temperature Coef ficient of Var , Forward Voltage @ Ir LL J Maximum Zener Impedance @ Izy ix [Revesecurent | Maximum Zener Impedance @ |zx Device Marking MMBZ5V6A XX=Specific Device Code 5 of —2 1 Series (See Table on Page 3) 2 REV.08 2 of 4

Wg giz: suIKUES ELECTRICALCHARACTERISTICS (Ta = 25 unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (Vr = 0.9 V Max @ Ir = 10 mA) 24 WATTS mez —[ 205 [ a0 | 0 [sx | s6 | seem | 1 [isolom [ao] so] 126 | wazevon | oe [3005 | so [62 [or [10] | | [a7 [ove] m0 | a L_wmezrova [toa | 65 | 03 | 950 [ 10 | 05 [ 10 | - | - [ - ju2fi7{ 75 | (Vr = 0.9 V Max @ Ir = 10 mA) 40 WATTS Fimezion [ian [es | 20 [nw | 2 [ew [io] 7 | 28 | 75 [imam [isa [0s [is fiers ae [a i es [imezign [tea as [ 0 Paso [eae [0 [sis [imezzon [207 [so 0 [a aioe [10 | as | aa [re] |_-muazzrva [27a | 22 | 50 | 2565 | a7 | aan {io | a | 10 [3 | L_wwezsava [33a [26 | 50 | s36[ 33 | es [ io | «6 | os [x4 | 4. Ver measured at pulse test current Ir at an ambient temperature of 25°C. 5. Zzy and Zzx, are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for Iz,ac = 0.1 1(0¢), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Fig 5 and derate per Fig 6 100 ea 100 ag ~ F-ERRRRESEEGHRE CT recrancutar Hog) Eee f = Se SSS eres: Zz Se Sees: y Fag f 2 FO Ti ss I Py [SH ipinectionat ft THT 2 [PRET bupectionay Hl z HSS ith a 3 SUE 4 a | [4 . is ECS ame TTT § Coe OT NS EF opiRE TIONAL NSE

2 PRE UNIDIRECTIONAL TSS

S$ See ee ee oo Sn Co eee ee So < (EO Ti Tir = SHI Ps =

2 Cec sa Eo coco

2 “

2 LUM TIT TE TM) CECT

On T 10 100 1000 On T 10 100 1000 PW, PULSE WIDTH(ms) PW, PULSE WIDTH(ms) FIG.7 Maximum Non-repetitive Surge FIG.8 Maximum Non-repetitive Surge Power, Ppx Versus PW Power, Ppx(NOM)Versus PW Power is defined as Vasa x Iz(pk)where Vasytis Power is defined as Vz (NOM)xIz(pk)where Vz (NOM) is the clamping vottage at Ez(pk). the nominal Zener voltage measured at the low test current used for voltage classification REV.08 3 of 4

Wg gz x: oF MMBZ**** SERIES 18 V0 i ———— 10] a hese ———— 7 ———— 8 —S=S= SSS - J 1] | ea aae 26 0 +50 +100 +150 ool 25 +85 F125 TEMPERATURE( C) ‘TEMPERATURE(C) FIG.1 Typical Breakdown Voltage FIG.2 Typical Leakage Current Versus Temperature Versus Temperature (Upper curve for each voltage is bidirectional mode,) lower curve is undirectional mode) 320 300 wp tt ft ft | og 1 NPT TTT Pa LK aioupsascasraart | = am | Patt | ft | E anf XING u Fiat Po et | NANI | OT ee ee ee Ne < = Si ee ee ee NN iS ai __ rt it NN v7 ttt tt4eée-ltltit tN | 0 1 z 3 0 25 50 75 100 125 150 175 BIAS(V) TEMPERATURE(C) FIG.3 Typical Capacitance Versus Bias Voltage FIG.4 Steady State Power Derating Curve (Upper curve for each voltage is bidirectional mode,) lower curve is undirectional mode) eee, Fi 100 [tT {1 PULSE WIDTH (tp) IS DEFINED Pe 90 f NTT 7 7 Ty 7] Se eee | age te tt 100 fe {FF som oF Zen} NI] | J 7 Tf a Rewer tt | ge BN & Pot wtrrt es, | 1 Ai | | Tt |

5 Nop p iret ge NN

SS) a Se OO PN 88 Oy Nd 2... 52 20) a | IPSS EE to so Lt trreerrri £§ — |_t tT | TN Tf

0 T 2 3 4 Es 0 25 50 75 100 125 150 175 200

ereens) 1h AMBIENT TEMPERATURE(C) FIG.5 Pulse Waveform FIG.6 Pulse Derating Curve REV.08 4 of 4