MMBZXXXALT1G ONSEMI | Alldatasheet

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Technical content

Features

  • SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
  • Standard Zener Breakdown V oltage Range − 5.6 V to 47 V
  • Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform
  • ESD Rating: − Class 3B (> 16 kV) per the Human Body Model − Class C (> 400 V) per the Machine Model
  • ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge
  • Maximum Clamping V oltage @ Peak Pulse Current
  • Low Leakage < 5.0 /C0109A
  • Flammability Rating UL 94 V−0
  • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics CASE: V oid-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. SOT−23 CASE 318 STYLE 12 CATHODE 1

3 ANODE

See specific marking information in the device marking column of the table on page 3 of this data sheet. DEVICE MARKING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.

ORDERING INFORMATION

/C0071 XXX = Specific Device Code M = Date Code /C0071 = Pb−Free Package (Note: Microdot may be in either location) www.onsemi.com

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series www.onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1G thru MMBZ9V1ALT1G @ TL ≤ 25°C MMBZ12VALT1G thru MMBZ47VALT1G Ppk 24 W Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C °PD° 225 1.8 mW° mW/°C Thermal Resistance Junction−to−Ambient R/C0113JA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C °PD° 300 2.4 °mW mW/°C Thermal Resistance Junction−to−Ambient R/C0113JA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 6 and derate above T A = 25°C per Figure 7. *Other voltages may be available upon request. Device Package Shipping† MMBZ5V6ALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZMMBZ5V6ALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZ5V6ALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBZ6VxALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZMMBZ6VxALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZ6VxALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBZ9V1ALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZ9V1ALT13G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBZxxVALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZMMBZxxVALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZxxVALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZMMBZxxVALT3G* SOT−23 (Pb−Free) 10,000 / Tape & Reel SZMMBZxxVTALT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series www.onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current /C0081VBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK Uni−Directional Zener IPP IF V I IRIT VRWMVC VBR VF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 24 WATTS Device* Device Marking VRWM IR @ VRWM Breakdown Voltage Max Zener Impedance (Note 5) VC @ IPP (Note 6) /C0081VBRVBR (Note 4) (V) @ IT ZZT @ IZT ZZK @ IZK VC IPP Volts /C0109A Min Nom Max mA /C0087/C0087mA V A mV//C0053C (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS Device* Device Marking VRWM IR @ VRWM Breakdown Voltage VC @ IPP (Note 6) /C0081VBRVBR (Note 4) (V) @ IT VC IPP Volts nA Min Nom Max mA V A mV//C0053C (VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS Device* Device Marking VRWM IR @ VRWM Breakdown Voltage VC @ IPP (Note 6) /C0081VBRVBR (Note 4) (V) @ IT VC IPP Volts nA Min Nom Max mA V A mV//C0053C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. V BR measured at pulse test current IT at an ambient temperature of 25°C. 5. Z ZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Figure 6 and derate per Figure 7 * Include SZ-prefix devices where applicable.

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series www.onsemi.com TYPICAL COMMON ANODE APPLICATIONS A dual junction common anode design in a SOT−23 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of ESD applications are illustrated below. MMBZ5V6ALT1G THRU MMBZ47VALT1G KEYBOARD TERMINAL PRINTER ETC. FUNCTIONAL DECODERI/O A MMBZ5V6ALT1G THRU MMBZ47VALT1G GND Computer Interface Protection B C D Microprocessor Protection I/O RAM ROM CLOCK CPU CONTROL BUS ADDRESS BUS DATA BUS GND VGG VDD MMBZ5V6ALT1G THRU MMBZ47VALT1G

SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 1 2 XXXM/C0071 /C0071 XXX = Specific Device Code M = Date Code /C0071= Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ /C0071”, may or may not be present. GENERIC MARKING DIAGRAM* NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. SOLDERING FOOTPRINT VIEW C L 0.25 e E E b A SEE VIEW C DIM A MIN NOM MAX MIN MILLIMETERS 0.89 1.00 1.11 0.035 INCHES A1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 NOM MAX H STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE −ANODE STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: PIN 1. NO CONNECTION 2. CATHODE 3. ANODE STYLE 19: PIN 1. CATHODE 2. ANODE 3. CATHODE −ANODE STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 20: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 1 THRU 5: CANCELLED STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE c T TOP VIEW SIDE VIEW END VIEW 2.90 0.80 DIMENSIONS: MILLIMETERS 0.90 PITCH 3X 0.95 RECOMMENDED STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98ASB42226BDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1SOT−23 (TO−236) © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

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