MMBT2222 TGS | Alldatasheet
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TRANSISTOR (NPN) MARKING: 1P MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage V V CEO Collector-Emitter Voltage V V EBO Emitter-Base Voltage V I C Collector Current 200 mA P C Total Device Dissipation 200 mW R θJA ThermalResistanceFromJunction toAmbient 625 ℃/W T J Junction Temperature 150 T stg Storage Temperature -55 ~ +150 ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V (BR)CBO I C = 10μA, I E V Collector-emitter breakdown voltage V (BR)CEO I C = 1mA, I B V Emitter-base breakdown voltage V (BR)EBO I E =10μA, I C V Collector cut-off current I CBO V CB =60V, I E 0.1 μA Collector cut-off current I CEX V CE =30V, V BE(off) =3V nA Emitter cut-off current I EBO V EB =5V, I C 0.1 μA h FE(1) V CE =1V, I C =10mA 100 300 h FE(2) V CE =1V, I C = 50mA DC current gain h FE(3) V CE =1V, I C = 100mA Collector-emitter saturation voltage V CE(sat) I C =50mA, I B = 5mA 0.3 V Base-emitter saturation voltage V BE(sat) I C = 50mA, I B = 5mA 0.95 V Transition frequency f T V CE =20V, I C =10mA, 100MHz 300 MHz Delay Time t d nS Rise Time t r V CC =3V, V BE =-0.5V I C =10mA, I =-I =1.0mA nS Storage Time t s 200 nS Fall Time t f V CC =3V, I C =10mA, I =-I =1mA nS 1．BASE SOT-23 2．EMITTER 3．COLLECTOR MMBT2222 TIGER ELECTRONIC CO.,LTD
Plastic surface mounted package; 3 leads SOT-23