MMBT2222_V01 DGNJDZ | Alldatasheet
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Technical content
MMBT2222 TRANSISTOR (NPN)
FEATURES
Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 250 mW RΘJA Thermal Resistance From Junction To Ambient 500 ℃/W Operation Junction and Storage Temperature Range TJ,Tstg -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=10µA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO I C=10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO I E=10µA, IC=0 6 V Collector cut-off current ICBO V CB=60V, IE=0 10 nA Collector cut-off current ICEX VCE=30V, VEB(off)=3V 10 nA Emitter cut-off current IEBO V EB=3V, IC=0 0.1 µA hFE(1)* VCE=10V, IC=150mA 100 300 hFE(2)* VCE=10V, IC=0.1mA 40 DC current gain hFE(3)* V CE=10V, IC=500mA 42 Collector-emitter saturation voltage VCE(sat)1* IC=500mA, IB=50mA 1 V Collector-emitter saturation voltage VCE(sat)2* IC=150mA, IB=15mA 0.3 V Base-emitter saturation voltage VBE(sat)* IC=500mA, IB=50mA 1.2 V Transition frequency fT V CE=20V,IC=20mA, f=100MHz 300 MHz Delay time td 10 ns Rise time tr VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA 25 ns Storage time ts 225 ns Fall time tf VCC=30V, IC=150mA, IB1= IB2=15mA 60 ns *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK L H RANGE 100–200 200–300 MARKING M1B SOT–23 1. BASE 2. EMITTER 3. COLLECTOR DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
Symbol Dimensions In InchesDimensions In Millimeters Dongguan Nanjing Electronics Ltd. 2/3 www.dgnjdz.com
Dongguan Nanjing Electronics Ltd. 3/3 www.dgnjdz.com