MMBT2222

MMBT2222 FAIRCHILD | Alldatasheet

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©2004 Fairchild Semiconductor Corporation Rev. B, May 2004 MMBT2222 Absolute Maximum Ratings* Ta=25°C unless otherwise noted * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 0.6 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * I C = 10mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10µA, IC = 0 5.0 V ICBO Collector Cutoff Current V CB = 50V, IE = 0 VCB = 50V, IE = 0, Ta = 125°C µA µA IEBO Emitter Cutoff Current V EB = 3.0V, IC = 0 10 nA On Characteristics h FE DC Current Gain I C = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1.0V * IC = 500mA, VCE = 10V * 100 300 VCE(sat) Collector-Emitter Saturation Voltage * I C = 150mA, IB = 15V IC = 500mA, IB = 50V 0.4 1.6 V VBE(sat) Base-Emitter Saturation Voltage I C = 150mA, IB = 15V IC = 500mA, IB = 50V 1.3 2.6 V MMBT2222 NPN General Purpose Amplifier

• Sourced from process 19. SOT-23B E C Mark: 1B

©2004 Fairchild Semiconductor Corporation Rev. B, May 2004 MMBT2222 Electrical Characteristics (Continued) Ta=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted * Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”. Symbol Parameter Test Condition Min. Max. Units Small Signal Characteristics fT Curent Gain Bandwidth Product I C = 20mA, VCE = 20V, f = 100MHz 250 Cobo Output Capacitance V CB = 10V, IE = 0, f = 1MHz 8.0 pF Cibo Input Capacitance V EB = 0.5V, IC = 0, f = 1MHz 30 pF Switching Characteristics t d Delay Time V CC = 30V, VBE(OFF) = 0.5V, IC = 150mA, IB1 = 15mA 10 ns tr Rise Time 25 ns ts Storage Time V CC = 30V, IC = 150mA, IB1 = IB2 = 15mA 225 ns tf Fall Time 60 ns Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/°C RθJA Thermal Resistance, Junction to Ambient 357 °C/W

Rev. B, May 2004©2004 Fairchild Semiconductor Corporation 0.96~1.14 0.12 0.03~0.10

0.38 REF

0.40 ±0.03 2.90 ±0.10 1.90 ±0.03 0.508REF 2.40 ±0.10 +0.05 –0.023 0.20 MIN0.40 ±0.03 SOT-23

©2004 Fairchild Semiconductor Corporation Rev. I11 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™