MMBT2222

MMBT2222_07 DIOTEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 2

Technical content

NPN Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN Version 2006-05-15 Dimensions - Maße [mm] 1 = B 2 = E 3 = C Power dissipation – Verlustleistung 250 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25°C) Grenzwerte (T A = 25°C) MMBT2222 MMBT2222A Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open V CEO 30 V 40 V Collector-Base-voltage – Kollektor-Basis-Spannung E open V CBO 60 V 75 V Emitter-Base-voltage – Emitter-Basis-Spannung C open V EBO 5 V 6 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) I C 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (T j = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 2) IC = 0.1 mA, V CE = 10 V IC = 1 mA, V CE = 10 V IC = 10 mA, V CE = 10 V IC = 150 mA, V CE = 10 V hFE hFE hFE hFE 100 300 I C = 500 mA, V CE = 10 V 2) MMBT2222 MMBT2222A hFE hFE h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA Small signal current gain Kleinsignal-Stromverstärkung MMBT2222 MMBT2222A hfe hfe 300 375 Input impedance – Eingangs-Impedanz MMBT2222 MMBT2222A hie hie 2 kΩ 0.25 kΩ 8 kΩ 1.25 kΩ Output admittance – Ausgangs-Leitwert MMBT2222 MMBT2222A hoe hoe 5 µS 25 µS 35 µS 200 µS Characteristics (Tj = 25°C) Kennwerte (T j = 25°C) 1 Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses t p = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 2.5 max 1.3 ±0.1 1.1 0.4 2.9 ±0.1 1 2 Type Code 1.9

Min. Typ. Max. Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA MMBT2222 MMBT2222A VCEsat VCEsat 0.4 V 0.3 V IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A VCEsat VCEsat 1.6 V 1.0 V Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA MMBT2222 MMBT2222A VBEsat VBEsat 0.65 V 1.3 V 1.2 V IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A VBEsat VBEsat 2.6 V 2.0 V Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 50 V, (E open) VCB = 60 V, (E open) MMBT2222 MMBT2222A ICBO ICBO 10 nA 10 nA VCB = 50 V, Tj = 125°C, (E open) VCB = 60 V, Tj = 125°C, (E open) MMBT2222 MMBT2222A ICBO ICBO 10 µA 10 µA Emitter-Base cutoff current – Emitter-Basis-Reststrom VEB = 3 V, (C open) MMBT2222A I EB0 – –- 100 nA Gain-Bandwidth Product – Transitfrequenz VCE = 20 V, IC = 20 mA, f = 100 MHz f T 250 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz C CBO –– 8 p F Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz C EBO – – 25 pf Noise figure – Rauschzahl VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz MMBT2222A F – – 4 dB Switching times – Schaltzeiten (between 10% and 90% levels) delay time rise time VCC = 3 V, VBE = 0.5 V IC = 150 mA, IB1 = 15mA td – – 10 ns tr – – 25 ns storage time fall time V CC = 3 V, IC = 150 mA, IB1 = IB2 = 15 mA ts – – 225 ns tf – – 60 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren MMBT2709 / MMBT2709A Marking - Stempelung MMBT2222 = 1B MMBT2222A = M1P 2 Tested with pulses t p = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG