MMBT2222

MMBT2222 DIOTEC | Alldatasheet

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1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2.5 max 1.3 ±0.1 1.1 2.9 ±0.1 0.4 1 2 Type Code 1.9 MMBT2222, MMBT2222A Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors NPN Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Version 2004-05-04 Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25°C) Grenzwerte (TA = 25°C) MMBT2222 MMBT2222A Collector-Emitter-voltage B open V CE0 30 V 40 V Collector-Base-voltage E open V CB0 60 V 75 V Emitter-Base-voltage C open V EB0 5 V 6 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) I C 600 mA Junction temp. – Sperrschichttemperatur T j 150°C Storage temperature – Lagerungstemperatur T S - 65…+ 150°C Characteristics (Tj = 25°C) Kennwerte (T j = 25°C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 50 V IE = 0, VCB = 60 V MMBT2222 MMBT2222A ICB0 ICB0 10 nA 10 nA I E = 0, VCB = 50 V, Tj = 150°C IE = 0, VCB = 60 V, Tj = 150°C MMBT2222 MMBT2222A I CB0 ICB0 10 µA 10 µA Emitter-Base cutoff current – Emitterreststrom I C = 0, VEB = 3 V MMBT2222A I EB0 – – 100 nA Collector saturation voltage – Kollektor-Sättigungsspannung 1) IC = 150 mA, IB = 15 mA MMBT2222 MMBT2222A V CEsat VCEsat 400 mV 300 mV I C = 500 mA, IB = 50 mA MMBT2222 MMBT2222A V CEsat VCEsat 1.6 V 1 V

1) Tested with pulses t p = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 2) MMBT2222: I C = 1 mA, MMBT2222A: IC = 10 mA 3) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß Switching Transistors MMBT2222, MMBT2222A Characteristics (Tj = 25°C) Kennwerte (T j = 25°C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) IC = 150 mA, IB = 15 mA MMBT2222 MMBT2222A VBEsat VBEsat 600 mV 1.3 V 1.2 V I C = 500 mA, IB = 50 mA MMBT2222 MMBT2222A V BEsat VBEsat 2.6 V 2 V DC current gain – Kollektor-Basis-Stromverhältnis VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA VCE = 1 V, IC = 150 mA VCE = 10 V, IC = 500 mA hFE hFE hFE hFE hFE hFE 100 300 h-Parameters at V CE = 10V, f = 1 kHz, IC = 1 mA / 10 mA 2) Small signal current gain Kleinsignal-Stromverstärkung MMBT2222 MMBT2222A h fe hfe 300 375 Input impedance Eingangs-Impedanz MMBT2222 MMBT2222A h ie hie 2 kΩ 0.25 kΩ 8 k Ω 1.25 kΩ Output admittance Ausgangs-Leitwert MMBT2222 MMBT2222A h oe hoe 5 µS 25 µS 35 µS 200 µS Gain-Bandwidth Product – Transitfrequenz V CE = 10 V, IC = 10 mA, f = 100 MHz f T 250 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 4 pF 8 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz C EB0 – 20 pF 25 pF Noise figure – Rauschzahl VCE = 10 V, IC = 100 µA, RS = 1 kΩ, f = 1 kHz MMBT2222A F – – 4 dB Switching times – Schaltzeiten delay time VCC = 30 V, - VBE = 0.5 V IC = 150 mA, IB1 = 15 mA td – – 10 ns rise time t r – – 25 ns storage time VCC = 30 V, IC = 150 mA IB1 = - IB2 = 15 mA ts – – 225 ns fall time t f – – 60 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft R thA 420 K/W 3) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren MMBT2907, MMBT2907A Marking - Stempelung MMBT2222 = (M)1B MMBT2222A = 1P