PN200A ONSEMI | Alldatasheet
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Technical content
PN200A / MMBT200 — PNP General-Purpose Amplifier Publication Order Number: PN200A/D © 1997 Semiconductor Components Industries, LLC. October-2017, Rev. 2 PN200A / MMBT200 PNP General-Purpose Amplifier
Ordering Information
Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations. Figure 1. PN200A Device Package Figure 2. MMBT200 Device Package
Description
This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.
PN200A / MMBT200 — PNP General-Purpose Amplifier Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Notes:
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. Symbol Parameter Max. Unit PN200A(3) MMBT200(4) PD Total Device Dissipation 625 350 mW Derate Above 25°C5 .0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W Symbol Parameter Conditions Min. Max. Unit Off Characteristics BVCBO Collector-Base Breakdown Voltage I C = -10 μA, IB = 0 -60 V BVCEO Collector-Emitter Breakdown Voltage(5) IC = -1.0 mA, IE = 0 -45 V BVEBO Emitter-Base Breakdown Voltage I E = -10 μA, IC = 0 -6.0 V ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -50 nA ICES Collector Cut-Off Current VCE = -40 V, IE = 0 -50 nA IEBO Emitter Cut-Off Current VEB = -4.0 V, IC = 0 -50 nA On Characteristics hFE DC Current Gain IC = -100 μA, VCE = -1.0 V MMBT200 80 PN200A 240 IC = -10 mA, VCE = -1.0 V MMBT200 100 450 PN200A 300 600 I C = -100 mA, VCE = -1.0 V(5) PN200A 100 IC = -150 mA, VCE = -5.0 V(5) MMBT200 100 350 PN200A 100 V CE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -1.0 mA -0.2 V VBE(sat) Base-Emitter Saturation Voltage I V Small Signal Characteristics fT Current Gain - Bandwidth Product V CE = -20 V, IC = -20 mA, 250 MHz Cob Output Capacitance VCB = -10 V, f = -1.0 MHz 6.0 pF NF Noise Figure IC = -100 μA, VCE = -5.0 V, RG = 2.0 kΩ, f = 1.0 kHz 4.0 dB www.onsemi.com
Figure 14. 3-LEAD, TO-92, MOLDED, STD STRAGHIT LEAD (NO EOL CODE) (ACTIVE) conditions, specifically the warranty therein, which covers ON Semiconductor products.
Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) itions, specifically the warranty therein, which covers ON Semiconductor products. TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. MOLD FLASH AND TIE BAR EXTRUSIONS.
1.20 MAX
0.20 A B
0.20 MIN
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