PN200 FAIRCHILD | Alldatasheet

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PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units PN200A *MMBT200A PD Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 mW mW/ °C R θJC Thermal Resistance, Junction to Case 83.3 °C/W R θJA Thermal Resistance, Junction to Ambient 200 357 °C/W SOT-23 Mark: N2 / N2A C B E TO-92 C B E *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation

PN200 / MMBT200 / PN200A / MMBT200A Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test C onditions Min Max Units ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% BV CBO Collector-Base Breakdown VoltageIC = 10 µA, IB = 0 60 V BV CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IE = 0 45 V BV EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V ICBO Collector Cutoff Current V CB = 50 V, IE = 0 50 nA ICES Collector Cutoff Current V CE = 40 V, IE = 10 50 nA IEBO Emitter Cutoff Current V EB = 4.0 V, IC = 0 50 nA fT Current Gain - Bandwidth Product VCE = 20 V, IC = 20 mA 250 MHz C obo Output Capacitance V CB = 10 V, f = 1.0 MHz 6.0 pF NF Noise Figure IC = 100 µA, VCE = 5.0 V, 200 R G = 2.0 kΩ , f = 1.0 kHz 200A 5.0 4.0 dB dB hFE DC Current Gain IC = 100 µA, VCE = 1.0 V 200 200A IC = 10 mA, VCE = 1.0 V 200 200A IC = 100 mA, VCE = 1.0 V* 200A IC = 150 mA, VCE = 5.0 V* 200 200A 240 100 300 100 100 100 450 600 350 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 0.2 0.4 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 0.85 1.0 V V PNP General Purpose Amplifier (continued) Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current P6 8 0.1 1 10 100 300 0.05 0.1 0.15 0.2 0.25 0.3 I - COLLECTOR CURRENT (mA) V - COLLECTOR EMITTER VOLTAGE (V)CCESAT 25 °C - 40 ºC 125 ºC β = 10 Typical Pulsed Current Gain vs Collector Current 0.01 0.1 1 10 100 100 200 300 400 500 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 5VCE

PN200 / MMBT200 / PN200A / MMBT200A Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 300 0.2 0.4 0.6 0.8 1.2 I - COLLECTOR CURRENT (mA) V - BASE EMITTER VOLTAGE (V) C BESA T β = 10 25 °C - 40 ºC 125 ºC Base Emitter ON Voltage vs Collector Current 0.1 1 10 100 200 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE EMITTER ON VOLTAGE (V)C BEON V = 5VCE 25 °C - 40 ºC 125 ºC Collector-Cutoff Current vs. Ambient Temperature 25 50 75 100 125 0.01 0.1 100 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A CBO º V = 50VCB Ω CER Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 0.1 1 10 100 1000 RESISTANCE (k ) BV - BREAKDOWN VOLTAGE (V) PNP General Purpose Amplifier (continued) Collector Saturation Region 100 300 700 2000 4000 I - BASE CURRENT (uA) V - COLLECTOR-EMITTER VOLTAGE (V)CE B 50 mA 300 mA100 uA Ta = 25°C Ic = Input and Output Capacitance vs Reverse Voltage 0.1 1 10 100 100 V - COLLECTOR VOLTAGE(V) CAPACITANCE (pF) Cib Cob f = 1.0 MHz ce

PN200 / MMBT200 / PN200A / MMBT200A PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Gain Bandwidth Product vs Collector Current P6 8 11 0 2 0 5 0 1 0 0 1 5 0 I - COLLECTOR CURRENT (mA) f - GAIN BANDWIDTH PRODUCT (MHz) C T V = 5Vce Switching Times vs Collector Current 10 20 30 50 100 200 300 120 150 180 210 240 270 300 I - COLLECTOR CURRENT (mA) TIME (nS) IB1 = IB2 = Ic / 10 V = 10 V C cc ts td tf tr Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 100 200 300 400 500 600 700 TEMPERATURE ( C) P - POWER DISSIPATION (mW) D o TO-92 SOT-23