MMBT1616A LUGUANG | Alldatasheet

Document overview

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Technical content

NPN Silicon Epitaxial Planar Transistor MMBT1616A

FEATURES

z Audio frequency power amplifier. z Medium speed switching.

APPLICATIONS

z General purpose applicati on,switching application.

ORDERING INFORMATION

T y p e N o . M a r k i n g P a c k a g e C o d e MMBT1616A 16A SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit V CBO Collector-Base Voltage 120 V V CEO Collector-Emitter Voltage 60 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 1000 mA P C Collector Dissipation 350 mW T T stg Junction and Storage Temperature -55 to +150 ℃ http://www.lgesemi .com mai l:lge@lgesemi.comRevision:20170701-P1

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100μA I E =0 120 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA I B =0 60 V Emitter-base breakdown voltage V (BR)EBO I E =100μA I C =0 6 V Collector cut-off current I CBO V CB =60V I E =0 0.1 μA Collector cut-off current I EBO V CE =6V I C =0 0.1 μA DC current gain h FE V CE =2V I C =100mA 135 400 V CE =2V I C =1A 81 Collector-emitter saturation voltage V CE(sat) I C =1A I B =50mA 0.3 V Base-emitter saturation voltage V BE(sat) I C =1A I B =50mA 1.2 V Transition frequency f T V CE =2V I C =100mA 100 MHz Output capacitance C ob V CB =10V,I E =0,f=1.0MHz 19 pF Delay time t on V CE =10V, I C =100mA 0.07 us Rise time T f V BE(off) =2-3V 0.07 us Storage time t s I =10mA 0.95 us SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.1 Typical K 2.20 2.60 All Dimensions in mm A B C D E J H K G

@ Ta=25℃ unless otherwise specified NPN Silicon Epitaxial Planar Transistor MMBT1616A http://www.lgesemi .com mai l:lge@lgesemi.comRevision:20170701-P1 Device Package Shipping MMBT1616A SOT-23 3000/Tape&Reel