MMBT1616A DGNJDZ | Alldatasheet
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TRANSISTOR (NPN)
FEATURES
z Audio frequency power amplifier z Medium speed switching MARKING:16A MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parame ter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10µA, I E =0 120 V Collector-emitter breakdown voltage V (BR)CEO I C =2mA, I B =0 60 V Emitter-base breakdown voltage V (BR)EBO I E =10µA, I C =0 6 V Collector cut-off current I CBO V CB = 60V, I E =0 100 nA Emitter cut-off current I EBO V EB =6V, I C =0 100 nA h FE(1) V CE =2V, I C =100mA 135 600 DC current gain h FE(2) V CE =2V, I C =1A 81 Collector-emitter saturation voltage V CE(sat) I C =1A, I B =50mA 0.3 V Collector-emitter saturation voltage V BE(sat) I C =1A, I B =50mA 1.2 V Base-emitter voltage V BE V CE =2V, I C =50mA 0.6 0.7 V Transition frequency f T V CE =2V,I C =100mA, f=100MHz 100 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 19 pF CLASSIFICATION OF h FE(1) RANK Y G L RANGE 135~270 200~400 300~600 Symbol Parameter Value Unit V CBO Collector-Base Voltage 120 V V CEO Collector-Emitter Voltage 60 V V EBO Emitter-Base Voltage 6 V I C Collector Current 1 A P C Collector Power Dissipation 350 mW R ΘJA Thermal Resistance From Junction To Ambient 357 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55～+150 ℃ SOT–23 1. BASE 2. EMITTER 3. COLLECTOR DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
0.1 1 10 100 1000 20 40 60 80 100 100 150 200 250 1 10 100 1000 100 1000 0.1 1 10 100 1000 200 400 600 800 1000 200 400 600 800 1000 100 150 200 02468 1 0 0.0 0.1 0.2 0.3 0.4 0.5 200 400 600 800 1000 0.1 100 1000 100 f=1MHz I E =0 / I C T a =25 o C REVERSE VOLTAGE V (V) CAPACITANCE C (pF) V CB / V EB C ob / C ib C ib C ob TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CE =2V T a =25 o C I C f T V CE = 2V T a =100 o C T a =25 o C COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE I C h FE COLLECTOR CURRENT I C (mA) BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) T a =25 T a =100 β=20 I C V BEsat T a =25 T a =100 β=20 V CEsat —— I C COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) COMMON EMITTER T a =25 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA I B =0.1mA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) Static Characteristic VCE=2V Ta=25 Ta=100 o C BASE-EMITTER VOLTAGE V BE (mV) COLLECTOR CURRENT I C (mA) I C ——V BE 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 COLLECTOR POWER DISSIPATION P c (W) AMBIENT TEMPERATURE T a ( ) P c —— T a T ypical Characteristics Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
Symbol Dimensions In InchesDimensions In Millimeters Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com
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