MMBT13001SA PJSEMI | Alldatasheet
Document overview
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Technical content
Features
High Voltage and High speed switch Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 420 V Emitter Base Voltage VEBO 10 V Collector Current IC 150 mA Power Dissipation PD 300 mW Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55 to 150 ℃ SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Marking: 8D www.pingjingsemi.com Revision：1.0 Feb-2019
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 20 V, IC = 10 mA HFE 15 Collector Base Cutoff Current at VCB = 700 V ICBO - 100 μA Emitter Base Cutoff Current at VEB = 10 V IEBO - 100 μA Emitter Base Breakdown Voltage at IE = 100 μA V(BR)EBO 10 - V Collector Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA VCE(sat) - 1.05 V Base Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA VBE(sat) - 1.55 V Transition Frequency at VCE = 10 V, IC = 50 mA, f = 1 MHz fT 5 - MHz Storage Time at UI9600, IC = 100 mA ts - 3 μs Collector Base Breakdown Voltage at IC = 100 μA V(BR)CBO 700 - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 420 - V MMBT13001SA NPN Transistor www.pingjingsemi.com Revision：1.0 Feb-2019 25 - Collector Base Cutoff Current at VCE = 420 V ICEO - 100 μA Rise Time at UI9600, IC = 100 mA tr - 1 μs Fall Time at UI9600, IC = 100 mA tf - 1 μs
Electrical Characteristics Curves MMBT13001SA NPN Transistor www.pingjingsemi.com Revision：1.0 Feb-2019
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Ordering Information
Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 L1 0.550REF L 0.300 0.500 θ 0° 8° Device Package Reel Dimension (inch) Shipping MMBT13001SA SOT-23 7 3,000 Package Outline(SOT-23) MMBT13001SA NPN Transistor